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Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Konferencja
The International Conference on Semiconductor Mid-IR Materials and Optiics (SMMO 2010) ; (21-23.10.2010 ; Warsaw, Poland)
Języki publikacji
Abstrakty
Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 µm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.
Wydawca
Czasopismo
Rocznik
Tom
Strony
137--139
Opis fizyczny
Bibliogr. 12 poz., il., wykr.
Twórcy
autor
- Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50−370 Wrocław, Poland
autor
- Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50−370 Wrocław, Poland
autor
- Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50−370 Wrocław, Poland
autor
- Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50−370 Wrocław, Poland
autor
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
autor
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
autor
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
autor
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
autor
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
autor
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
Bibliografia
- [1] J.R. Meyer, C.A. Hoffman, F.J. Bartoli, and L.R. Ram-Mohan: Type-II quantum-well lasers for the mid-wave-length infrared. Appl. Phys. Lett. 67, 757-160, 1995.
- [2] R.Q. Yang: Infrared laser based on intersubband transitions in quantum wells. Superlattice Microst. 17, 77-83, 1995.
- [3] M. Kim, C.L. Canedy, C.S. Kim, W.W. Bewley, J.R. Lindle, J. Abell, I. Vurgaftman, and J.R. Meyer: Room temperature interband cascade lasers. Physics Procedia 3, 1195, 2010.
- [4] A. Bauer, F. Langer, M. Dallner, M. Kamp, M. Motyka, G. Sęk, K. Ryczko, J. Misiewicz, S. Höfling, and A. Forchel: Emission wavelength tuning of interband cascade lasers in the 3-4-µm spectral range. Appl. Phys. Lett. 95, 251103, 2009.
- [5] M. Motyka, G. Sęk, K. Ryczko, J. Misiewicz, T. Lehnhardt, S. Höfling, and A. Forchel: Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications. Appl. Phys. Lett. 94, 251901, 2009.
- [6] M. Motyka, G. Sęk, J. Misiewicz, A. Bauer, M. Dallner, S. Höfling, and A. Forchel: Fourier transformed photoreflectance and photoluminescence of mid infrared GaSb-based type II quantum wells. Appl. Phys. Express 2, 126505, 2009.
- [7] M. Motyka and J. Misiewicz: Fast differential reflectance spectroscopy of semiconductor structures for infrared applications by using Fourier transform spectrometer. Appl. Phys. Express 3, 112401, 2010.
- [8] M. Utko, G. Sęk, K. Ryczko, L. Bryja, J. Misiewicz, M. Bayer, J. Koeth, and A. Forchel: Optical investigations of the above barrier state transitions in GaAs/Al0.3Ga0.7As double quantum wells. Mater. Sci. Eng. C19, 167-169, 2002.
- [9] R.M. Cohen, M. Kitamura, and Z.M. Fang: Surface quantum wells. Appl. Phys. Lett. 50, 1675, 1987.
- [10] M. Motyka, M. Syperek, R. Kudrawiec, J. Misiewicz, M. Rudziński, P. Hageman, and P.K. Larsen: Investigations of GaN surface quantum well by contactless electroreflectance spectroscopy. Appl. Phys. Lett. 89, 231912, 2006.
- [11] Y. Koshimoto, Y. Shirakai, and S. Fukatsu: Gas-source molecular beam epitaxial growth of SiGe alloy-based 'naked' quantum wells. Thin Solid Films 321, 81, 1998.
- [12] V. Bogatu, A. Goldenblum, A. Many, and Y. Goldstein: Surface quantum wells in hydrogen implanted ZnO. Phys. Status Solidi B212, 89, 1999.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0022-0002