Properties comparison of GaN epilayers deposited under different growth temperatures

• Autorzy: Wang P. , Yan H. , Cao B. , Wei W. , Gan Z. , Liu Z.
• Języki publikacji: EN

Abstrakty

EN

Undoped GaN epilayers were grown on c-plane sapphire substrates under different growth temperatures by metalorganic chemical vapour deposition (MOCVD). The optical and structural characteristics of these grown samples were studied and compared. It was found that the crystalline quality of GaN film deposited at 1050°C was better that of other samples. Photoluminescence spectra showed that the intensities of yellow luminescence band of the samples decreased as the growth temperature increased. All above test results demonstrate that high temperature deposition can serve as a good method for high-quality GaN epilayer growth and there exists an optimal growth temperature.

Słowa kluczowe

EN

gallium nitride; metalorganic chemical vapour deposition; growth temperature

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 1
• Strony: 30--33
• Opis fizyczny: Bibliogr. 12 poz., il., wykr.

Twórcy

autor

Wang P.

autor

Yan H.

autor

Cao B.

autor

Wei W.

autor

Gan Z.

autor

Liu Z.

• School of Mechanical Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074 Wuhan, China

Bibliografia

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