Changes in 8-12 μm Hg₁₋xCdxTe photodiode arrays caused by fast neutron irradiation

• Autorzy: Lysiuk I. O. , Gumenjuk-Sichevska J. V. , Dvoretsky S. A. , Varavin V. S.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

We have measured the current-voltage characteristics of the long-wavelength infrared (LWIR) photodiode array, formed on the epitaxial Hg₁₋xCdxTe film (x = 0.21-0.23) with a high concentration of the Shockley-Read-Hall centres, before and after irradiating it with fast neutrons (energy 1 MeV, dose 5×10¹³ cm⁻²) at room temperature. Residual changes in current-voltage characteristics, persisting after 20 days, have been identified. Model calculations indicate that the Shockley-Read-Hall centre concentration increases 2-4 times, and the carrier lifetime decreases 2-5 times after the irradiation.

Słowa kluczowe

EN

LWIR photodiode array; mercury cadmium telluride; neutron radiation

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 342--344
• Opis fizyczny: Bibliogr. 8 poz., wykr.

Twórcy

autor

Lysiuk I. O.

• Institute of Semiconductor Physics NASU, 41 Nauki Ave., 03028 Kiev, Ukraine

autor

Gumenjuk-Sichevska J. V.

• Institute of Semiconductor Physics NASU, 41 Nauki Ave., 03028 Kiev, Ukraine

autor

Dvoretsky S. A.

autor

Varavin V. S.

Bibliografia

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