Linear HgCdTe IR FPA 288 × 4 with bidirectional scanning

• Autorzy: Vasilyev V. V. , Predein A. V. , Varavin V. S. , Mikhailov N. N. , Dvoretsky S. A. , Gumenjuk-Sichevska J. V. , Golenkov A. G. , Reva V. P. , Sabinina I. V. , Sidirov Y. V. , Susliakov A. O. , Sizov F. F. , Aseev A. L.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The long wavelength (8-12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20-0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4-7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R₀ = 1.6×10⁷ Ω zero bias voltage, which corresponded to R₀A ∼70 Ω •cm² and to the maximal value Rmax = 2.1 × 10⁸ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×10⁸ V/W, the detectivity Dλ * = 2.13 × 10¹¹ cm × Hz½ × W⁻¹, and the noise equivalent temperature difference NETD = 9 mK.

Słowa kluczowe

EN

IR FPA; hybrid assembly; thermal imaging; LWIR

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 332--337
• Opis fizyczny: Bibliogr. 15 poz., il., wykr.

Twórcy

autor

Vasilyev V. V.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Predein A. V.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Varavin V. S.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Mikhailov N. N.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Dvoretsky S. A.

• A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, Russia

autor

Gumenjuk-Sichevska J. V.

autor

Golenkov A. G.

autor

Reva V. P.

autor

Sabinina I. V.

autor

Sidirov Y. V.

autor

Susliakov A. O.

autor

Sizov F. F.

autor

Aseev A. L.

Bibliografia

• [1] E. Fossum and B. Pain: Infrared readout electronics for space-science sensors: state of art and future directions. Proc. SPIE 2020, 262-285, 1994.
• [2] Ph. Tribolet, Ph. Hirel, A. Lussereau and M. Vuillermet: Main results of Sofradir IRFPAs including IRCCD and IRCMOS detectors. Proc. SPIE 2225, 369-381, 1994.
• [3] A. Rogalski: Infrared Detectors, Gordon and Breach, Amsterdam, 2000.
• [4] A. Manissadjian, Ph. Tribolet, P. Chorier and P. Costa: Sofradir infrared detector products: the past and the future. Proc. SPIE. 4130-58, 1-16, 2000.
• [5] V. V. Vasiliev, A. G. Klimenko, I. V. Marchishin, V. N. Ovsyuk, N. Ch. Talipov, T. I. Zahar'yash, A. G. Golenkov, Yu. P. Derkach, V. P. Reva, F. F. Sizov and V. V. Zabudsky: MCT heteroepitaxial 4×288 FPA. Infrared Phys. Techn. 45, 13-23, 2004.
• [6] Yu. G. Sidorov. S. A. Dvoretskii, V. S. Varavin, N. N. Mikhailov, M. V. Yakushev and I. V. Sabinina: Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates. Semiconductors 35, 1045-1053, 2001.
• [7] V. V. Vasiliev, S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, Y. G. Sidorov, T. I. Zakharyash, V. N. Ovsyuk, G. V. Chekanova, M. S. Nikitin, I. Y. Lartsev and A. L. Aseev: MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures. Proc. SPIE 5964, 75-87, 2005.
• [8] J. V. Gumenjuk-Sichevska and F. F. Sizov: Currents in narrow-gap photodiodes. Semicond. Sci. Techn. 14, 1124-1133, 1999.
• [9] F. F. Sizov, I. O. Lysiuk, J. V. Gumenjuk-Sichevska, S. G. Bunchuk and V. V. Zabudsky: Gamma radiation exposure of MCT diode arrays. Semicond. Sci. Techn. 21, 358-363, 2006.
• [10] E. V. Andreeva, V. S. Varavin, V. V. Vasiliev, J. V. Gumenjuk-Sichevska, S. A. Dvoretsky, N. N. Mihajlov, Z. F. Tsybtii and F. F. Sizov: Comparison of current characteristics of CdHdTe photodiodes grown by MBE and LPE methods. J. Opt. Technol. 76, 42-48, 2009. (in print)
• [11] F. F. Sizov, Yu. P. Derkach, Yu. G. Kononenko and V. P. Reva: Testing of readout device processing electronics for IR linear and focal plane arrays. Proc. SPIE 3436, 942-948, 1999.
• [12] F. F. Sizov, V. P. Reva, Y. P. Derkach and V. V. Vasiliev: Comparative analysis of 4×288 readouts and FPAs. Proc. SPIE 5964, 301-308, 2005.
• [13] J. R. Janesik: Scientific Charge - Coupled Devices, SPIE, Bellingham, Washington, 2001. P. 906.
• [14] F. F. Sizov, V. V. Vasil'ev, A. O. Suslyakov, V. P. Reva and A. G. Golenkov: 4×288 readouts and FPAs propeties. Opto-Electron. Rev. 14, 67-74, 2006.
• [15] V. V. Vasiliev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, V. N. Ovsyuk, Yu. G. Sidorov, A. O. Suslyakov, M. V. Yakushev and A. L. Aseev: HgCdTe epilayers on GaAs: growth and devices. Opto-Electron. Rev. 11, 99-111, 2003.