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Warianty tytułu
Konferencja
IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
Języki publikacji
Abstrakty
Ion milling, as a tool for ''stirring'' defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼10¹⁴ cm⁻³), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an ''equilibrium'' state with defect concentration lower than that after low-temperature annealing.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
328--331
Opis fizyczny
Bibliogr. 10 poz., wykr.
Twórcy
autor
autor
autor
autor
autor
- R&D Institute for Materials SRC ''Carat'', 202 Stryjska Str., 79031 Lviv, Ukraine, mynkad@mail.ioffe.ru
Bibliografia
- [1] K. D. Mynbaev and V. I. Ivanov-Omskii: Modification of Hg1-xCdxTe properties by low-energy ions. Semiconductors 37, 1127-1150, 2003.
- [2] D. Shaw and P. Capper: Conductivity type conversion in Hg1-xCdxTe. J. Mater. Sci. Mater. El. 11, 169-177, 2000.
- [3] V. V. Bogoboyashchii and I. I. Izhnin: Mechanism for conversion of the type of conductivity in p-Hg1-xCdxTe crystals upon bombardment by low-energy ions. Russ. Phys. J. 43, 627-636, 2000.
- [4] M. Pociask, I. I. Izhnin, E. S. Ilyina, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin and K. D. Mynbaev: Study of the defect structure of Hg1-xCdxTe films by ion milling. Acta Phys. Pol. A114, 1191-1199, 2008.
- [5] F. Aqariden, H. D. Shih, M. A. Kinch and H. F. Schaake: Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy. Appl. Phys. Lett. 78, 3481-3483, 2001.
- [6] V. V. Bogoboyashchyy, A. I. Elizarov and I. I. Izhnin: Conversion of conductivity type in Cu-doped Hg0.8Cd0.2Te crystals under ion beam milling. Semicond. Sci. Tech. 20, 726-732, 2005.
- [7] P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina and Yu. G. Sidorov: Effect of low-temperature annealing on electrical properties of n-HgCdTe. Semiconductors 38, 1172-1174, 2004.
- [8] M. Pociask, I. I. Izhnin, A. I. Izhnin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin and K. D. Mynbaev: Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling. Semicond. Sci. Tech. 24, 025031, 2009.
- [9] P. Capper: A review of impurity behavior in bulk and epitaxial Hg1-xCdxTe. J. Vac. Sci. Technol. B9, 1667-1681, 1991.
- [10] E. Belas, V. V. Bogoboyashchii, R. Grill, I. I. Izhnin, A. P. Vlasov and V. A. Yudenkov: Time relaxation of points defects in p- and n-(HgCd)Te after ion beam milling. J. Electron. Mater. 32, 698-702, 2003.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0018-0044