Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

• Autorzy: Izhnin I. I. , Denisov I. A. , Smirnova N. A. , Pociask M. , Mynbaev K. D.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Ion milling, as a tool for ''stirring'' defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼10¹⁴ cm⁻³), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an ''equilibrium'' state with defect concentration lower than that after low-temperature annealing.

Słowa kluczowe

EN

ion milling; HgCdTe; defects; liquid phase epitaxy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 328--331
• Opis fizyczny: Bibliogr. 10 poz., wykr.

Twórcy

autor

Izhnin I. I.

autor

Denisov I. A.

autor

Smirnova N. A.

autor

Pociask M.

autor

Mynbaev K. D.

• R&D Institute for Materials SRC ''Carat'', 202 Stryjska Str., 79031 Lviv, Ukraine,

Bibliografia

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