Nature of gallium deep centres in lead telluride based semiconductors

• Autorzy: Petrenko T. L. , Plyatsko S. V.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Doped with Ga lead telluride was taken as a model object to explain the nature of group-III deep levels in IV-VI semiconductors and to elucidate the vapour phase doping mechanism. For this goal, interaction of various gallium-containing molecules with defect-free crystal as well as with native defects in PbTe was considered. Formation energies for different point defects created in PbTe as a result of interaction the Ga₂Te molecules, Ga₂ dimers and single Ga atoms with a host crystal were calculated using density functional theory. Particularly Ga_Pb and Ga_i together with formation of accompanied self interstitials Pbi in various charge states were examined. In addition we propose the new type of defects - the impurity complex (2Ga)_Pb which looks like <111>-oriented gallium dumbbell. Calculations suggest the double donor behaviour and DX-like properties of this defect together with extremely low formation energy values. Namely, (2Ga)_Pb centres are preferably formed under Ga₂Te doping while (Ga₂)_Pb+Pb_i ones are formed under Ga₂ or Ga doping. In all cases, formation energies are negative and resulting defect concentration is determined by reaction kinetics only. Mechanisms of the lead vacancy compensation with the vapour phase doping are considered as well.

Słowa kluczowe

EN

lead telluride; gallium impurity; doping mechanisms; first principle calculations

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 310--317
• Opis fizyczny: Bibliogr. 30 poz., wykr.

Twórcy

autor

Petrenko T. L.

autor

Plyatsko S. V.

• Institute of Semiconductor Physics, NASU, 45 Nauky Ave., 03028 Kyiv, Ukraine,

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