Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg₁₋xCdxTe

• Autorzy: Gasan-Zade S. G. , Strikha M. V. , Shepelskii G. A.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg₁₋xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5-2.7 kbar, E = 50-55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4-6 times) occur.

Słowa kluczowe

EN

gapless semiconductors; Hg1-xCdxTe; uniaxial stress; stimulated emission; THz range

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 305--309
• Opis fizyczny: Bibliogr. 12 poz., wykr.

Twórcy

autor

Gasan-Zade S. G.

autor

Strikha M. V.

autor

Shepelskii G. A.

• V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave., 03028 Kiev, Ukraine,

Bibliografia

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