Control of acceptor doping in MOCVD HgCdTe epilayers

• Autorzy: Madejczyk P. , Piotrowski A. , Kłos K. , Gawron W. , Rutkowski J. , Rogalski A.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The acceptor doping of mercury cadmium telluride (HgCdTe) layers grown by MOCVD are investigated. (111)HgCdTe layers were grown on (100)GaAs substrates at 350°C using horizontal reactor and interdiffused multilayer process (IMP). TDMAAs and AsH3 were alternatively used as effective p-type doping precursors. Incorporation and activation rates of arsenic have been studied. Over a wide range of Hg₁₋xCdxTe compositions (0.17 < x < 0.4), arsenic doping concentration in the range from 5×10¹⁵ cm⁻³ to 5×10¹⁷ cm⁻³ was obtained without postgrowth annealing. The electrical and chemical properties of epitaxial layers are specified by measurements of SIMS profiles, Hall effect and minority carrier lifetimes. It is confirmed that the Auger-7 mechanism has decisive influence on carrier lifetime in p-type HgCdTe epilayers.

Słowa kluczowe

EN

HgCdTe epilayers; MOCVD growth; acceptor doping; TDMAAs precursor; Auger 7 mechanism

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 271--276
• Opis fizyczny: Bibliogr. 19 poz., wykr.

Twórcy

autor

Madejczyk P.

autor

Piotrowski A.

autor

Kłos K.

autor

Gawron W.

autor

Rutkowski J.

autor

Rogalski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,

Bibliografia

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