Transport studies of MBE-grown InAs/GaSb superlattices

• Autorzy: Szmulowicz F. , Haugan H. J. , Elhamri S. , Brown G. J. , Mitchel W. C.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L^5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering.

Słowa kluczowe

EN

InAs/GaSb; superlattice; mobility; transport; interface roughness scattering

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 267--270
• Opis fizyczny: Bibliogr. 17 poz., wykr.

Twórcy

autor

Szmulowicz F.

autor

Haugan H. J.

autor

Elhamri S.

autor

Brown G. J.

autor

Mitchel W. C.

• University of Dayton Research Institute, Dayton, OH 45469, USA,

Bibliografia

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