A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer

• Autorzy: Chowdhury S. , Adhikary S. , Halder N. , Chakrabarti S.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

In this paper, we present a new approach to obtain large size dots in an MBE grown InAs/GaAs multilayer quantum dot system. This is achieved by adding an InAlGaAs quaternary capping layer in addition to a high growth temperature (590°C) GaAs capping layer with the view to tune the emission wavelength of these QDs towards the 1.3 µm/0.95 eV region important for communication devices. Strain driven migration of In atoms from InAlGaAs alloy to the InAs QDs effectively increases the size of QDs. Microscopic investigations were carried out to study the dot size and morphology in the different layers of the grown samples. Methods to reduce structural defects like threading dislocations in multilayer quantum dot samples are also studied.

Słowa kluczowe

EN

semiconductor quantum dots; molecular beam epitaxy; transmission electron microscopy; photoluminescence; dislocations

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 246--249
• Opis fizyczny: Bibliogr. 16 poz., il., wykr.

Twórcy

autor

Chowdhury S.

autor

Adhikary S.

autor

Halder N.

autor

Chakrabarti S.

• Centre for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, Maharashtra India,

Bibliografia

• [1] G. S. Solomon, J. A. Trezza, A. F. Marshall and J. S. Harris, Jr.: Vertically aligned and electronically coupled growth induced InAs islands in GaAs. Phys. Rev. Lett. 76, 952-955, 1996.
• [2] A. Martí, L. Cuadra and A. Luque: Design constraints of the quantum-dot intermediate band solar cell. Physica E14, 150-157, 2002.
• [3] H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutierrez, M. Hopkinson, J. S. Ng and J. P. R. David: Improved performance of 1.3-μm multilayer InAs quantum.dot lasers using a high-growth-temperature GaAs spacer layer. Appl. Phys. Lett. 85, 704, 2004.
• [4] H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama and H. Ishikawa: Temperature dependent lasing characteristics of multi-stacked quantum dot lasers. Appl. Phys. Lett. 71, 193-195, 1997.
• [5] L. Harris, D. J. Mowbray and M. S. Skolnick: Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers. Appl. Phys. Lett 73, 969, 1998.
• [6] M. Alessi, M. Capizzi, A. S. Bhatti, A. Frova, F. Martelli, P. Frigeri, A. Bosacchi and S. Franchi: Optical properties of InAs quantum dots: Common trends. Phys. Rev. B59, 7620-7623, 1999.
• [7] W. Seifert, N. Carlsson, M. Miller, M. E. Pistol, L. Samuelson and L. R. Wallenberg: In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode. Prog. Cryst. Growth Ch. 33, 423-471, 1996.
• [8] Y. T. Dai, J. C. Fan, Y. F. Chen, R. M. Lin, S. C. Lee and H. H. Lin: Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses. J. Appl. Phys. 82, pp. 4489, 1997.
• [9] G. S. Solomon, J. A. Trezza and J. S. Harris Jr.: Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs. Appl. Phys. Lett. 66, 991, 1995.
• [10] P. B. Joyce, T. J. Krzyzewski, G. R. Bell, T. S. Jones, S. Malik, D. Childs and R. Murray: Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy. Phys. Rev. B62, 10891-10895, 2000.
• [11] M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. S. Sizov, Yu. M. Shernyakov, I. N. Kaiander, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, Zh. I. Alferov, R. Heitz, V. A. Shchukin, N. N. Ledentsov and D. Bimberg, Yu. G. Musikhin and W. Neumann: Tuning quantum dot properties by activated phase separation of an InGaAlAs alloy grown on InAs stressors. Phys. Rev. B62, 16671-16680, 2000.
• [12] J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H. S. Kwack, C. W. Lee and D. K. Oh: Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer. J. Cryst. Growth 259, 252, 2003.
• [13] X. Q. Huang, F. Q. Liu, X. L. Che, J. Q. Liu, W. Lei and Z. G. Wang: Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures. J. Cryst. Growth 270, 364, 2004.
• [14] H. Y. Liu, I. R. Sellers, M. Gutierrez, K. M. Groom, W. M. Soong, M. Hopkinson, J. P. R. David, R. Beanland, T. J. Badcock, D. J. Mowbray and M. S. Skolnick: Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures. J. Appl. Phys. 96, 1988, 2004.
• [15] E. C. Le Ru, A. J. Bennett, C. Roberts and R. Murray: Strain and electronic interactions in InAs/GaAs quantum dot multilayers for 1300 nm emission. J. Appl. Phys. 91, 1365, 2002.
• [16] B. Ilahi, L. Sfaxi, F. Hassen, B. Salem, G. Bremond, O. Marty, L. Bouzaiene and H. Maaref: Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots. Mater. Sci. Eng. C26, 374, 2006.