Energy-band diagrams and capacity-voltage characteristics of CdxHg₁₋xTe : based variband structures calculated with taking into account dependence of electron affinity on a composition

• Autorzy: Voitsekhovskii A. V. , Gorn D. I. , Nesmelov S. N. , Kokhanenko A. P.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The purpose of this scientific work is the research of energy-band diagrams and capacity-voltage characteristics of CdxHg₁₋xTe -based variband heteroepitaxial structures with taking into account the dependence of electron affinity on the composition. Numerical simulations of energy-band diagrams and capacity-voltage characteristics for metal-insulator-semiconductor structures based on CdxHg₁₋xTe -variable composition layers are carried out in this work. Energy diagrams are calculated with taking into account the dependence of electron affinity on the composition x of CdxHg₁₋xTe. This dependence was obtained in terms of dependence of the local electroneutrality level on the composition for CdxHg₁₋xTe.

Słowa kluczowe

EN

energy-band diagram; variband structure; electron affinity; mercury cadmium telluride; capacity-voltage characteristics

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 241--245
• Opis fizyczny: Bibliogr. 7 poz., wykr.

Twórcy

autor

Voitsekhovskii A. V.

autor

Gorn D. I.

autor

Nesmelov S. N.

autor

Kokhanenko A. P.

• Tomsk State University, 36 Lenina Ave., 634050 Tomsk, Russia,

Bibliografia

• [1] V. S. Varavin, V. V. Vasiliev and T. I. Zakhariash: Photodiods with the low sequent resistance based on variband epitaxial layers CdxHg1-xTe. Optical Journal 66, 69-72, 1999.
• [2] D. I. Gorn, S. N. Nesmelov, A. V. Voitsekhovskii and A. P. Kokhanenko: Calculation of energy-band diagrams of HgCdTe-based variband structures with taking into account the dependence of electron affinity on the composition. Izv. Vuz. Fiz 51, 134-137, 2008.
• [3] D. I. Gorn, S. N. Nesmelov, A. V. Voitsekhovskii and A. P. Kokhanenko: Calculation of capacity-voltage characteristics of HgCdTe-based structures with taking into account the dependence of electron affinity on the composition. Izv. Vuz. Fiz. 51, 138-142, 2008.
• [4] V. N. Brudniy and S. N. Grinyaev: Attachment of chemical potential and electronic properties of radiated solid solutions CdxHg1-xTe. FTP 35, 819-822, 2001.
• [5] B. S. Sokolovskii: Reverse current of variband p-n-structure with the nonmonotonic coordinate dependence of band-gap energy. FTP 35, 1341-1346, 2001.
• [6] V. B. Bojevolnov and A. M. Yafyasov: Formation of two- and one-dimensional solid phase quantum nanostructures on the basis of system CdHgTe electrolyte. FTP 38, 1374-1381, 2004.
• [7] A. Rogalski: Infrared Detectors, edited by A. V. Voitsekhovskii, Novosibirsk, Nauka, 2003. (Russian translation from English)