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Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

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Konferencja
IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009 ; Warsaw, Poland)
Języki publikacji
EN
Abstrakty
EN
Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or ''IR-AFPA'', adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.
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autor
  • Thin Film Physics Group, ETH Zürich, Technoparkstrasse 1, CH-8005 Zürich, Switzerland, zogg@phys.ethz.ch
Bibliografia
  • [1] Lead chalcogenides: Physics and applications. Optoelectronic Properties of Semiconductors and Superlattices, Vol. 18, edited by D. Khokhlov, Taylor & Francis Books, Inc., New York and London, 2003.
  • [2] M. Tacke: Lead-salt lasers. Philos. Tr. R. S. A359, 547, 2001.
  • [3] H. Zogg, M. Arnold, F. Felder, M. Rahim, M. Fill and D. Boye: Epitaxial lead-chalcogenides on Si for mid-IR detectors and emitters including cavities. Proc. SPIE 7082, 70820H, 2008.
  • [4] P. Müller, H. Zogg, A. Fach, J. John, C. Paglino, A. N. Tiwari, M. Krejci and G. Kostorz: Reduction of threading dislocation densities in heavily lattice mismatched PbSe on Si(111) by glide. Phys. Rev. Lett. 78, 3007, 1997.
  • [5] H. Zogg, K. Alchalabi, D. Zimin and K. Kellermann: Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms. IEEE T. Electron Dev. 50, 209, 2003.
  • [6] F. Felder, M. Arnold, M. Rahim, C. Ebneter and H. Zogg: Tunable lead-chalcogenide on Si resonant cavity enhanced mid-infrared detector. Appl. Phys. Lett. 91, 101102, 2007.
  • [7] N. Quack, S. Blunier, J. Dual, F. Felder, M. Arnold and H. Zogg: Mid-Infrared tunable resonant cavity enhanced detectors. Sensors 8, 5466-5478, 2008.
  • [8] F. Felder, PhD dissertation, No 18786 ETH Zurich, 2010.
  • [9] M. Rahim, M. Arnold, F. Felder, K. Behfar and H. Zogg: Mid-infrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength. Appl. Phys. Lett. 91, 151102, 2007.
  • [10] N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns and J. Wagner: High-brightness long-wavelength semiconductor disk lasers. Laser Photonics Rev. 2, 160, 2008.
  • [11] M. Rattunde, J.-M. Hopkins, N. Schulz, B. Rösener, C. Manz, K. Kohler, D. Burns and J. Wagner: High-power GaSb-based optically pumped semiconductor disk laser for the 2.X μm wavelength regime. Mid-Infrared Optoelectronics. Materials and Devices MIOMD-IX, Sept 7-11, Freiburg, 2008.
  • [12] W. W. Bewley, J. R. Lindle, C. S. Kim, M. Kim, C. L. Canedy, I. Vurgaftman and J. R. Meyer: Lifetimes and Auger coefficients in type-II W interband cascade lasers. Appl. Phys. Lett. 93, 041118, 2008.
  • [13] M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini and H. Melchior: Continuous wave operation of a mid.infrared semiconductor laser at room temperature. Science 295, 301, 2002.
  • [14] H. Zogg, M. Rahim, F. Felder, M. Fill, D. Boye and A. Khiar: Lead chalcogenide VECSELs on Si and BaF2 for 5 μm emission. Proc. SPIE 7193, 71931G, 2009.
  • [15] M. Rahim, A. Khiar, F. Felder, M. Fill and H. Zogg: 4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature. Appl. Phys. Lett. 94, 201112, 2009.
  • [16] M. Rahim, M. Fill, F. Felder, D. Chappuis, M. Corda and H. Zogg: Mid-infrared PbTe vertical external cavity surface emitting laser on Si.substrate with above 1Woutput power. Appl. Phys. Lett. 95, 241107, 2009.
  • [17] M. Rahim et al., unpublished.
  • [18] F. Felder, M. Rahim, M. Fill, H. Zogg and N. Quack: Lead Salt Resonant Cavity Enhanced Detector with MEMS Mirror. Physics Procedia, Proc. 14 th Int. Conf. on Narrow Gap Semiconductors, Sendai, Japan, July 13-17, 2009.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0018-0028
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