Field effect transistors for terahertz detection : silicon versus III-V material issue

• Autorzy: Knap W. , Videlier H. , Nadar S. , Coquillat D. , Dyakonova N. , Teppe F. , Bialek M. , Grynberg M. , Karpierz K. , Lusakowski J. , Nogajewski K. , Seliuta D. , Kašalynas I. , Valušis G.
• Konferencja: IR and THz Electronics : from Materials to Devices of E-MRS 2009 ; (15-18.09.2009, Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs.

Słowa kluczowe

EN

THz detection; imaging; field effect transistors

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2010
• Tom: Vol. 18, No. 3
• Strony: 225--230
• Opis fizyczny: Bibliogr. 22 poz., il., wykr.

Twórcy

autor

Knap W.

autor

Videlier H.

autor

Nadar S.

autor

Coquillat D.

autor

Dyakonova N.

autor

Teppe F.

autor

Bialek M.

autor

Grynberg M.

autor

Karpierz K.

autor

Lusakowski J.

autor

Nogajewski K.

autor

Seliuta D.

autor

Kašalynas I.

autor

Valušis G.

• CNRS & Université Montpellier 2, Place E. Bataillon, 34095 Montpellier, France,

Bibliografia

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