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Ostwald ripening of nanoislands in semiconductor heterosystems and its influence on optical properties

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Języki publikacji
EN
Abstrakty
EN
Influence of the Ostwald ripening on character of the size distribution in semiconductor heterosystems with quantum dots as island films consisting of cylindrical, disclike islands of constant height is studied. Size distribution function and formulae for temporal changes of average island size are derived. Calculations are carried out within the LSW theory, in assumption of joint action of two (diffusion and Wagner) growing mechanisms. Comparison of the calculating results with experimental data proves validity of the accepted model approximations. Expectancy of correlation of the distribution function, growing mechanisms and properties of heterosystems is discussed.
Twórcy
  • Chernivtsi National University, 2 Kotsubinsky Str., 58012 Chernivtsi, Ukraine, vengrenovich@i.ua
Bibliografia
  • [1] W. Ostwald: Uber die Vermeintliche Isometric des roten undgelben Quecksiberxyds und die Oberflachenspannung fester Korper. Zs. Phys. Chem. 34, 495-503, 1900. (in German)
  • [2] I. M. Lifshitz and V. V. Slezov: Okinetike diffusionnogo raspada peresischennih tverdih rastvorov. JETP 35, 479-492, 1958. (in Russian)
  • [3] C. Wagner: Theorie der Alterung von Niderschlagen durch Umlosen. Zs. Electrochem. 65, 581-591, 1961. (in German)
  • [4] B. K. Chakraverty: Grain size distribution in thin films. Conservative systems. J. Phys. Chem. Solids 28, 2401-2412, 1967.
  • [5] S. A. Kukushkin, A. V. Osipov, F. Schmitt and P. Hess: Zarojdenie kogerentnih poluprovodnikovih heterostruktur pri roste po mechanizmu Stranskogo-Krastanova, induzirovannoe uprugimi napryajeniyami. FTP 36, 1177-1185, 2002. (in Russian)
  • [6] O. P. Pchelyakov, Yu. B. Nikiforov, A. I. Yakimov and B. Foyhtlender: Kremniy-germanievie nanostruktury s kvantovymi tochkami: mechanizmy obrasovaniya i elektronnie svoystva. FTP 34, 1281-1299, 2000. (in Russian)
  • [7] N. N. Ledenzov, V. M. Ustinov and V. A. Schukin: Heterostruktury s kvantovymi tochkami, poluchenie, svoystva, lasery. FTP 32, 385-410, 1998. (in Russian)
  • [8] R. D. Vengrenovich, Yu. V. Gudyma and S. V. Yarema: Ostwaldovskoe sozrevanie nanostructur s kvantovymi tochkami. FTP 35, 1440-1444, 2001. (in Russian)
  • [9] V. A. Shchukin and D. Bimberg: Spontaneous ordering of nanostructures on crystal surfaces. Rev. Mod. Phys. 71, 1125-1171, 1999.
  • [10] T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg and R. S. Williams: Evolution of Ge Islands on Si (001) during Annealing. J. Appl. Phys. 85, 1159, 1999.
  • [11] V. I. Ivanov-Omskiy, A. V. Kolobov and A. B. Lodygin: Amorfnye, stekloobraznie i poristye poluprovodniki. FTT 38, 1463-1465, 2004. (in Russian)
  • [12] A. V. Antonov, D. M. Gaponova, V. M. Danilzev, M. N. Drozdov, L. D. Moldavskaya, A. V. Murel, V. S. Tulovchikov and V. I. Shashkin: Heterostruktury InGaAs/GaAs s kvantovymi tochkami dlya infrakrasnys photopriemnikov diapasona 3-5 mkm. FTP 39, 96-99 2005. (in Russian)
  • [13] R. D. Vengrenovich, Yu. V. Gudyma and S. V. Yarema: Dislocation mechanism of quantum dot formation in heteroepitaxial structures. Phys. Status Solidi B242, 881-889, 2005.
  • [14] A. P. Alechin: Strukturnaya organizaciya veschestva na poverhnosti - pyt v nanotehnologiyu. Uspehi Sovremennoy Radioelektroniki 5, 118-122, 2004. (in Russian)
  • [15] M. S. Dunaevskiy, Z. F. Krasilnik, D. N. Lobanov, A. V. Novikov, A. N. Titkov and R. Laiho: Vizualizaciya zaroschennih nanoostrovkov GeSi v kremnievih strukturah metodom atomno-silovoy mikroskopii na skolah. FTP 37, 692-699, 2003. (in Russian)
  • [16] R. A. Andrievskiy: Nanomaterialy: konzepziya i sovremennie problemy. Ros. Him. Jurn. 46, 50-56, 2002. (in Russian)
  • [17] V. F. Reutov and S. N. Dmitriev: Ionno-trekovaya nanotehnologiya. Ros. Chim. Jurn. 46, 74-80, 2002. (in Russian)
  • [18] M. Roko: Perspektivy razvitiya nanotehnologii: nozionalnie programmy, problemy obrasovaniya. Ros. Him. Jurn. 46, 90-95, 2002. (in Russian)
  • [19] N. N. Gerasimenko: Nanorazmernie struktury v implantirovannyh poluprovodnikah. Ros. Him. Jurn. 46, 30-41, 2002. (in Russian)
  • [20] S. M. Alfimov, V. A. Bykov, E. P. Grebennikov, S. I. Zheludeva, P. P. Malzev, V. F. Petrunin and Yu. A. Chapligin: Rasvitie v Rossii rabot v oblasti nanotehnologii. Nano- i mikrosistemnaya Tehnika 8, 2-8, 2004. (in Russian)
  • [21] V. V. Slezov and V. B. Sagalovich: Diffusionniy raspad pe-resischennih tverdih rastvorov. UFN 151, 67-104, 1987. (in Russian)
  • [22] R. D. Vengrenovich, A. V. Moskalyuk and S. V. Yarema: Ostwaldovskoe sozrevanie v usloviyah smeshannogo tipa diffusii. FTT 49, 13-18, 2007. (in Russian)
  • [23] R. D. Vengrenovich, A. V. Moskalyuk and S. V. Yarema: Raspredelenie ostrovkov po razmeram v usloviyah disloka-zionno-poverhnostnoy diffusii dlya poluprovodnikovyh heterostruktur. FTP 40, 276-280, 2006. (in Russian)
  • [24] R. D. Vengrenovich, B. V. Ivans'kyi and A. V. Moskalyuk: Generalized Chakraverty-Wagner distribution. Ukrainian Journal of Physics 11, 1101-1109, 2008. (in Ukrainian)
  • [25] R. D. Vengrenovich, A. V. Moskalyuk and B. V. Ivans'kiy: Ostwaldowe dozrivannya kvantovo-rozmirnuh nanokrustaliv v umovah zmishanoi dyfuzii. Metallophizika i Noveyshie Tehnologii 30, 247-266, 2008. (in Ukrainian)
  • [26] R. D. Vengrenovich: O kinetike koaleszencii v tonkih plenkah. Ukranian Journal of Physics 25, 442-447, 1980. (in Ukrainian)
  • [27] K. L. Safonov and Yu. V. Trushin: Kriteriy perehoda kogerentnih nanoklasterov Ge na Si ot piramidalnoy k kupoloobraznoy forme. Pisma JTP, 33, 7-12, 2007. (in Russian)
  • [28] S. A. Kukushkin and A. V. Osipov: Procesy kondensacii tonkih plenok. UFN 168, 1083-116, 1998. (in Russian)
  • [29] R. D. Vengrenovitch: On the Ostwald ripening theory. Acta Metall. 30, 1079-1086, 1982.
  • [30] E. W. H. Kan, B. H. Koh, W. K. Choi, W. K. Chim, D. A. Antoniadis and E. A. Fitzgerald: Nanocrystalline Ge flash memories: Electrical characterization and trap engineering. 5th Singapore-MIT Alliance Annual Symposium, Singapore, 19-20 January, 2005.
  • [31] A. I. Yakimov, A. I. Nikiforov and A. V. Dvurechenski: Bonding state of a hole in Ge/Si double quantum dots. JETP Lett. 86, 478-481, 2007.
  • [32] S. Gwo, Ch. P. Chou, Ch. L. Wu, Y. J. Ye, S. J. Tsai, W. Ch. Lin and M. T. Lin: Self-limiting size distribution of supported cobalt nanoclusters at room temperature. Phys. Rev. Lett. 90, 185506, 2003.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0018-0019
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