Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures : impact of built-in polarization fields

• Autorzy: Esmaeili M. , Gholami M. , Haratizadeh H. , Monemar B. , Holtz P. O. , Kamiyama S. , Amano H. , Akasaki I.
• Języki publikacji: EN

Abstrakty

EN

We report the results from detailed optical spectroscopy from MOCVD grown GaN/AlGaN multiple quantum wells (MQWs), as opposed to most previous studies where MBE was employed by means of photoluminescence (PL) technique. In this paper we will present theoretical and experimental results demonstrating how polarization induced electric fields and bound interface charges in GaN/AlGaN MQWs affect the emission peak energy, PL line shape, as well as the emission line width. Theoretically estimated fields in this work are consistent with experimental data. Transition energy of the heavy hole and electron ground state Ee-hh in GaN/AlGaN MQWs were calculated and it is found that it stays in good agreement with the experimental data.

Słowa kluczowe

EN

optical study; photoluminescence; GaN/AlGaN; quantum well nanostructures

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2009
• Tom: Vol. 17, No. 4
• Strony: 293--299
• Opis fizyczny: Bibliogr. 30 poz., wykr.

Twórcy

autor

Esmaeili M.

autor

Gholami M.

autor

Haratizadeh H.

autor

Monemar B.

autor

Holtz P. O.

autor

Kamiyama S.

autor

Amano H.

autor

Akasaki I.

• Department of Basic Science, Islamic Azad University, Damghan Branch, Damghan, Iran,

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