PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Polarization-bistable vertical-cavity surface-emitting lasers : application for optical bit memory

Autorzy
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
We summarize recent results on polarization-bistable vertical-cavity surface-emitting lasers (VCSELs) and their application to optical buffer memory. All-optical flip-flop operation with very low switching energies and high repetition rates is achieved. An optical buffer memory consisting of a two-dimensional array of polarization-bistable VCSELs, in which the bit state of the optical signal, ''0'' or ''1'', is stored as a lasing linear polarization state of 0 or 90°. Input data stored as the polarization states of the first VCSEL are transferred to the polarization states of the second VCSEL. In our experiments with 980 nm polarization-bistable VCSELs, 10 Gbit/s optical buffering, 2-bit optical buffering, and a shift register function have been successfully demonstrated.
Twórcy
autor
  • Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan, khitoshi@ms.naist.jp
Bibliografia
  • [1] H. Kawaguchi, Bistabilities and Nonlinearities in Laser Diodes, Artech, Norwood MA, 1994.
  • [2] H. Kawaguchi: Bistable laser diodes and their applications: State of the art. IEEE J. Sel. Top. Quant. 3, 1254-1270, 1997.
  • [3] M. T. Hill, H. J. S. Doren, T. de Vries, X. J. M. Leijtens, J. H. den Besten, B. Smalbrugge, Y. S. Oei, H. Binsma, G. D. Khoe, and M. K. Smit: A fast lowpower optical memory based on coupled microring lasers. Nature 432, 206-209, 2004.
  • [4] S. Zhang, Z. Li, Y. Liu, G.D. Khoe, and H. J. S. Dorren: Optical shift register based on an optical flip-flop memory with a single active element. Opt. Express 13, 9708-9713, 2005.
  • [5] B. Tian, W. van Etten, and W. Beuwer: Ultrafast all-optical shift register and its perspective application for optical fast packet switching. IEEE J. Sel. Top. Quant. 8, 722-728, 2002.
  • [6] T. Katayama, T. Ooi, and H. Kawaguchi: Experimental demonstration of multi-bit optical buffer memory using 1.55-um polarization bistable vertical-cavity surface-emitting lasers. Submitted to IEEE J. Quantum Elect.
  • [7] J. E. Goell: A circular-harmonic computer analysis of rectangular dielectric waveguides. Bell Syst. Tech. J. 48, 2133-2160, 1969.
  • [8] B. M. Yu and J. M. Liu: Polarization-dependent gain, gain nonlinearities, and emission characteristics of internally strained InGaAsP/InP semiconductor lasers. J. Appl. Phys. 69, 7444-7459, 1991.
  • [9] Y. Takahashi, A. Neogi, and H. Kawaguchi: Polarization-dependent nonlinear gain in semiconductor lasers. IEEE J. Quantum Elect. 34, 1660-1672, 1998.
  • [10] Y. Takahashi and H. Kawaguchi: Polarization-dependent gain saturations in quantum-well lasers. IEEE J. Quantum Elect. 36, 864-871, 2000.
  • [11] Y. Takahashi and H. Kawaguchi: Strain-dependence of the gain saturation in InGaAsP/InP quantum-well gain media. IEEE J. Quantum Elect. 38, 1384-1389, 2002.
  • [12] T. Yoshikawa, H. Kosaka, K. Kurihara, M. Kajita, Y. Sugimoto, and K. Kasahara: Complete polarization control 8×8 vertical-cavity surfaceemitting laser matrix arrays. Appl. Phys. Lett. 66, 908-910, 1995.
  • [13] Y. Sato, T. Mori, Y. Yamayoshi, and H. Kawaguchi: Polarization bistable characteristics of mesa structure 980 nm vertical-cavity surface-emitting lasers. Jpn. J. Appl. Phys. 45, L438-L440, 2006.
  • [14] T. Mori, Y. Yamayoshi, and H. Kawaguchi: Low switching-energy and high-repetition-frequency all optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting lasers. Appl. Phys. Lett. 88, 101102, 2006.
  • [15] T. Mori and H. Kawaguchi: Dynamical lasing wavelength variation in polarization bistable switching of vertical-cavity surface-emitting lasers by light injection. Jpn. J. Appl. Phys. 46, L433-L436, 2007.
  • [16] Y. Sato, K. Furuta, T. Katayama, and H. Kawaguchi: Polarization switching in vertical-cavity surface-emitting lasers by asymmetrical current injection. IEEE Photonic. Tech. L. 20, 1446-1448, 2008.
  • [17] H. Kawaguchi, T. Mori, Y. Sato, and Y. Yamayoshi: Optical buffer memory using polarization-bistable vertical-cavity surface-emitting lasers. Jpn. J. Appl. Phys. 2 45, L894-L897, 2006.
  • [18] T. Mori, Y. Sato, and H. Kawaguchi: 10-Gb/s optical buffer memory using a polarization bistable VCSEL. IEICE T. Electron. E92-C, 957-963, 2009.
  • [19] T. Mori, Y. Sato, and H. Kawaguchi: 2-bit optical buffering using polarization bistable VCSELs. Proc. 19 th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2006), Montreal, WJ2, 510-511, 2006.
  • [20] T. Mori, Y. Sato, and H. Kawaguchi: Shift register function in optical buffer memory using polarization bistable VCSELs. Proc. Conf. on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conf. (CLEO/QELS), Baltimore, MA, CtuGG6, 2007.
  • [21] T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi: Polarization bistable characteristics of 1.55 um vertical-cavity surface-emitting lasers. Jpn. J. Appl. Phys. 46, L1231-L1233, 2007.
  • [22] T. Katayama, T. Ooi, and H. Kawaguchi: 4-bit all-optical buffer memory with shift register function using polarization bistable VCSELs. Proc. Optical Fiber Communication Conf. and National Fiber Optical Engineers Conf. (OFC/NFOEC), San Diego, CA, JthA33, 2009.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0016-0055
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.