A new phototransistor with uni-travelling-carrier and optically gradual coupling properties

• Autorzy: Wang L. , Zhao L. , Pan J. , Zhang W. , Wang H. , Zhu H. , Wang W.
• Języki publikacji: EN

Abstrakty

EN

Based on appropriate combination of different band-gap InGaAsP, a new edge-coupled two-terminal double heterojunction phototransistor (ECTT-DHPT) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-travelling-carrier mode and optically gradual coupling mode. This device is fully compatible with monolithic micro-wave integrated circuits (MMIC) and heterojunction bipolar transistor (HBT) in material and process. The DC characteristics reveal that the new ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52 A/W and dark current of 70 nA (when V_EC = 1 V) were obtained.

Słowa kluczowe

EN

phototransistor; double heterojunction; uni-travelling-carrier; gradual coupling

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2009
• Tom: Vol. 17, No. 3
• Strony: 242--246
• Opis fizyczny: Bibliogr. 26 poz., wykr.

Twórcy

autor

Wang L.

autor

Zhao L.

autor

Pan J.

autor

Zhang W.

autor

Wang H.

autor

Zhu H.

autor

Wang W.

• Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing, 100083, P.R. China,

Bibliografia

• [1] K. Sano, K. Murata, H. Fukuyama, S. Tsunashima, K. Ishii, K. Kurishima, H. Matwzaki, T. Enoki, and M. Muraguchi: InP-based optical system ICs operating at 40 Gbitls and beyond. Proc. Radio Frequency Integrated Circuits (RFIC) Symp., 313-316, 2004.
• [2] M. Bitter, R. Bauknecht, W. Hunziker, and H. Melchior: Monolithic InGaAs-InP pi-n/HBT 40-GblS optical receiver module. IEEE Photonic. Tech. L. 12, 74-76, 2000.
• [3] A. Leven, V. Houtsma, R. Kopf, Y. Baeyens, and Y. K. Chen: InP-based double heterostructure phototransistors with 135 GHz optical gain cutoff frequency. Electron. Lett. 40, 833-834, 2004.
• [4] V. E. Houtsma, A. Leven, J. Chen, J. Frackoviak, A. Tate, and N. G. Weiman: High gain-bandwidth InP waveguide phototransistor. Indium Phosphide and Related Materials Conf. Proc., 247-251, 2006.
• [5] D. Wake, D. J. Newson, M. J. Harlow, and I. D. Henning: Optically-biased edge-coupled InP/lnGaAs heterojunction phototransistors. Electron. Lett. 29, 2217-2219, 1993.
• [6] H. Kamitsuna, K. Ishii, T. Shibata, K. Kurishima, and M. Ida: A 43-Ghls clock and data recovery OElC integrating an InP-InGaAs HPT oscillator with an HBT decision circuit. IEEE J. Sel. Top. Quant. 10, 673-678, 2004.
• [7] H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa: Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs. IEEE T. Microw. Theory 49, 1921-1925, 2001.
• [8] H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa: A 82GHz optical gain cutoff frequency InP/InGaAs double heterostructure phototransistor (DHPT) and its application to a 40-GHz-band OEMMIC photoreceiver. European Microwave Conference (EUMC), Paris, 2000.
• [9] S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua: High-speed monolithic p-i-n/HBT and HPT/ HBT photoreceivers implemented with simple phototransistor structure. IEEE Photonic. Tech. L. 5, 1316-1318, 1993.
• [10] E. Suematsu and N. Imai: A fiber optic/millimeter-wave radio transmission link using HBT as direct photodetector and an optoelectronic upconverter. IEEE T. Microw. Theory 44, 133-143, 1996.
• [11] J. Van de Casteele, J. P. Vilcot, J. P. Gouy, F. Mollot, and D. Decoster: Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor. Electron. Lett. 32, 1030-1032, 1996.
• [12] C. P. Liu, A. J. Seeds, and D. Wake: Two-terminal edge-coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer. IEEE Microw. Guided W. 7, 72-74, 1997.
• [13] C. S. Choi, J. H. Seo, W. Y. Choi, H. Kamitsuna, M. Ida, and K. Kurishima: 60-GHz bidirectional radio-on-fiber links based on InP-InGaAs HPT optoelectronic mixers. IEEE Photonic. Tech. L. 17, 2721-2723, 2005.
• [14] J. C. Campbell, A. G. Dentai, C. A. Burrus, and J. F. Ferguson: InP/InGaAs heterojunction phototransistors. IEEE J. Quantum Elect. 17, 264-269, 1981.
• [15] M. Kobayashi, S. Sakai, and M. Umeno: Very low dark current P-p-P base InGaAsP/InP phototransistors. Jpn. J. Appl. Phys. 33, L159-L161, 1983.
• [16] H. Kamitsuna, K. Ishii, T. Shibata, K. Kurishima, and M. Ida: A 43-Gbps clock and data recovery OEIC integrating an InP/InGaAs HPT oscillator with an HBT decision circuit. IEEE J. Sel. Top. Quant. 10, 673-678, 2004.
• [17] Junghwan Kim, W.B. Johnson, S. Kanakaraju, and C.H. Lee: Lateral InP/InGaAs double heterojunction phototransistor over a trenched interdigitated finger structure. Solid State Electron. 51, 1023-1028, 2007.
• [18] S. Sakai, M. Naitoh, M. Kobayashi, and M. Umeno: InGaAsP/InP phototransistor-based detectors. IEEE T. Electron. Dev. ED-30, 404-408, 1983.
• [19] M. Tobe and Y. Amemiya: High-sensitivity InGaAsP/InP phototransistor. Appl. Phys. Lett. 37, 73-75, 1980.
• [20] W. K. Ng, C. H. Tan, P. A. Houston, and A. Krysa: High current InP/InGaAs evanescently coupled waveguide phototransistor. IEE P-Optoelectron. 152, 140-144, 2005.
• [21] D. P. Prakash, D. C. Scott, H. R. Fetterman, and W. Wang: Integration of polyimide waveguides with travelling-wave phototransistors. IEEE Photonic. Tech. L. 9, 800-802, 1997.
• [22] D. C. Scott, D. P. Prakash, H. Erlig, D. Bhattacharya, M. E. Ali, H. R. Fetterman, and M. Matloubian: High-power high-frequency travelling-wave heterojunction phototransistors with integrated polyimide waveguide. IEEE Microw. Guided W. 8, 284-286, 1998.
• [23] T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta: Uni-travelling-carrier photodiodes. Proc. Tech. Dig. Ultrafast Electronics and Optoelectronics, 83-87, 1997.
• [24] B. Reid, R. Maciejko, and A. Champagne: Absorption and index of refraction for the modelling of InGaAsP/InP photonic devices. Can. J. Phys. 71, 410-416, 1993.
• [25] M. Achouche, V. Magnin, J. Harari, F. Lelarge, E. Derouin, C. Jany, D. Carpentier, F. Blache, and D. Decoster: High performance evanescent edge coupled waveguide unitravelling-carrier photodiodes for 40 Gb/s optical receivers. IEEE Photonic. Tech. L. 16, 584-586, 2004.
• [26] C. S. Choi, H. S. Kang, W. Y. Choi, D. H. Kim, and K. S. Seo: Phototransistors based on InP HEMTs and their applications to millimetre-wave radio-on-fiber systems. IEEE T. Microw. Theory 53, 256-263, 2000.