Evaluation of optical quality and properties of Ga₀.₆₄In₀.₃₆N₀.₀₀₆As₀.₉₉₄ lattice matched to GaAs by using photoluminescence spectroscopy

• Autorzy: Gholami M. , Esmaeili M. , Haratizadeh H. , Holtz P. O. , Hammar M.
• Języki publikacji: EN

Abstrakty

EN

We have investigated optical properties of Ga₀.₆₄In₀.₃₆N₀.₀₀₆As₀.₉₉₄GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.

Słowa kluczowe

EN

optical efficiency; photoluminescence; InGaNAs/GaAs single quantum well nanostructures; SQW nanostructures; localized excitons; full width at half maximum; FWHM; photoluminescence integrated intensity; thermal annealing

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2009
• Tom: Vol. 17, No. 3
• Strony: 260--264
• Opis fizyczny: Bibliogr. 21 poz., wykr., il.

Twórcy

autor

Gholami M.

autor

Esmaeili M.

autor

Haratizadeh H.

autor

Holtz P. O.

autor

Hammar M.

• Department of Science, Islamic Azad University, Damghan Branch, Damghan, Iran,

Bibliografia

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