Department of Characterisation of Nanoelectronic Structures

• Autorzy: Przewłocki H. M.
• Języki publikacji: EN

Słowa kluczowe

EN

Institute of Electron Technology; scientific activity

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

• Wydawca: Instytut Technologii Elektronowej
• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2009
• Tom: z. 1/2
• Strony: 167--190
• Opis fizyczny: Bibliogr. 53 poz., wykr.

Twórcy

autor

Przewłocki H. M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• Publications'2008
• [P1] BOROWICZ P., NICKEL B.: The Joined Action of Triplet-Triplet Annihilation and First Order Decay of Molecules in the T1 State in the Case of Non-Dominant First Order Process. Part 1. The Kinetic Model in the Case of Spatially Homogeneous Excitation. Opto-Electron. Rev. (in press).
• [P2] BOROWICZ P., NICKEL B.: The Joined Action of Triplet-Triplet Annihilation and First Order Decay of Molecules in the T1 State in the Case of Non-Dominant First Order Process. Part 2. The Kinetic Model in the Case of Spatially Homogeneous Excitation. Opto-Electron. Rev. (in press).
• [P3] BOROWICZ P., NICKEL B.: The Joined Action of Triplet-Triplet Annihilation and First Order Decay of Molecules in the T1 State in the Case of Non-Dominant First Order Process. Part 1. The Kinetic Model in the Case of Spatially Homogeneous Excitation. J. Phys. Chem. C (in press).
• [P4] BOROWICZ L., RZODKIEWICZ W., BOROWICZ P., KULIK M.: Investigations of Physical Properties of SiO2 Layer dunder the Aluminium. Elektronika 2008 no. 11 p. 29-32 (in Polish).
• [P5] BOROWICZ L., RZODKIEWICZ W., BOROWICZ P., KULIK M.: Badania właściwości fizycznych warstwy SiO2 pod bramką aluminiową. Proc. of the VII Polish Conf. on Electronics (KKE2008). Darłówko, Poland, 2-4.06.2008, p. 13-18.
• [P6] BORYSIEWICZ M., KAMIŃSKA E., PIOTROWSKA A., KWIETNIEWSKI N., PASTERNAK I., KRUSZKA R., GUZIEWICZ M., RZODKIEWICZ W., DI FORTE-POISSON M.-A., DELAGE S., LAHRECHE H., DYNOWSKA E.: Surface Passivation of AlGaN/GaN Heterostructures Using ZnO-Based Dielectrics and Its Application to HEMTs. Proc. of the 17th Int. Conf. on Microwaves, Radar and Wireless Communications MIKON 2008 (MIKON08). Wrocław, Poland, 19-21.05.2008, vol. 3.
• [P7] CZAJKA B., WACHOWSKI L., PIETROWSKI M., ŁAPIŃSKI A., RZODKIEWICZ W.: Surface Modification of Iron Power as a Component of High Caloric Mixture. Int. J. Energetic Mater. 2008 vol. 5 no. 3-4 p. 87-102.
• [P8] GUTT T.: Characterization of MOS Structures with Multilayer High-k Insulator. Elektronika 2008 no. 1 p. 56-58.
• [P9] GUTT T.: Correlation of Interface Trap Characteristics in SiC:SiO2 with the Equivalent Circuit Parameters of a MOS Capacitor. Proc. of the 31st Int. Convention MIPRO - Conf. on Micro-Electronics, Electronics, and Electronic Technologies (MEET). Opatija, Kroatia, 26-30.05.2008 (in press).
• [P10] GUTT T., PRZEWŁOCKI H. M.: The Influence of the Conditions of Thermal Oxidation and Post-Metallization Annealing on the Presence of Border Traps in SiC:SiO2. Proc. of the VII Polish Conf. on Electronics (KKE2008). Darłówko, Poland, 2-4.06.2008, p. 117-122 (in Polish).
• [P11] GUTT T., PRZEWŁOCKI H. M.: The Influence of the Conditions of Thermal Oxidation and Post-Metallization Annealing on the Presence of Edge Traps in SiC:SiO2. Materials of the Special Conference Session Devoted to the Government Research Project PBZ-MEiN-6/2/2006 "New Technologies Based on Silicon Carbide and Their Application in High-Frequency Electronics". VII Polish Conf. on Electronics (KKE2008). Warsaw, Poland, 2008, p. 121-126 (in Polish).
• [P12] KRZYŻANOWSKA H., KULIK M., ŻUK J., RZODKIEWICZ W., KOBZEV A. P., SKORUPA W.: Optical Investigations of Germanium Nanoclusters-Rich SiO2 Layers Produced by Ion Beam Synthesis. J. Non-Crystalline Sol. (in press).
• [P13] KRZYŻANOWSKA H., ŻUK J., FELIKS J., KULIK M., RZODKIEWICZ W.: Optical Constants for Low Ion Fluence Implanted GaAs Determined by Differential Reflectance and Spectroscopic Ellipsometry. Vacuum (in press).
• [P14] KULIK M., RZODKIEWICZ W., ŻUK J., KRZYŻANOWSKA H., KOBZEV A. P., SKORUPA W.: Dielectric Function of Doubly Implanted Ge+ - Implanted and Annealed SiO2 Layers. Vacuum (in press).
• [P15] KULIK M., RZODKIEWICZ W., ŻUK J., MĄCZKA M.: Optical Parameters Changes of In+-Implanted and Annealed GaAs: Spectroscopic Ellipsometry Study. Vacuum (in press).
• [P16] KULIK M., ŻUK J., RZODKIEWICZ W., PYSZNIAK K., DROŹDZIEL A., TUREK W., PRUCNAL S., SOCHACKI M., SZMIDT J.: Optical Investigations of 6H-SiC and 15R-SiC Polytypes Subjected to Multiple Aluminum Ion Implantation at Elevated Temperature. Elektronika 2008 no. 7-8 p. 15-18 (in Polish).
• [P17] PISKORSKI K.: Photoelectric Methods to Determine Distributions of Parameter Values Over the Gate Area of MOS Devices. Proc. of the 38th Europ. Solid State Device Research Conf. ESSDERC and 34th Europ. Solid State Circuits Conf. ESSCIRC. Edinburgh, United Kingdom, 15-19.09.2008. IEEE, 2008, p. 23-25 CD-ROM.
• [P18] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Local Values of Flat-Band Voltage in Al-SiO2-Si Structures. Elektronika 2008 no. 11 p. 32-35 (in Polish).
• [P19] PISKORSKI K., PRZEWŁOCKI H. M.: Photoelectric Method to Determine of the Flat-Band Voltage in MOS Structures. Elektronika 2008 no. 1 p. 59-63 (in Polish).
• [P20] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Local Values of Flat-Band Voltage in Al-SiO2-Si Structures. Proc. of the 31st Int. Convention MIPRO - Conf. on Micro-Electronics, Electronics, and Electronic Technologies (MEET). Opatija, Kroatia, 26-30.05.2008, IEEE, 2008, p. 51-55.
• [P21] PISKORSKI K., PRZEWLOCKI H. M.: Distribution of Local Values of Flat-Band Voltage in Al-SiO2-Si Structures. Proc. of the VII Polish Conf. on Electronics (KKE2008). Darłówko, Poland, 2-4.06.2008, p. 19-24 (in Polish).
• [P22] PISKORSKI K., PRZEWŁOCKI H. M: Investigation of Flat-Band Voltage Distributions Over the Gate Area of AlSiO2-Si Structures, phys. stat. sol. A (in press).
• [P23] RZODKIEWICZ W., BOROWICZ L., BOROWICZ P., GUZIEWICZ M., KULIK M.: Studies of Physical Properties of MIS Structures with Aluminium Gate. J. Optics A: Pure a. Appl. Optics (in press).
• [P24] RZODKIEWICZ W., KULIK M.: Spectroscopic Ellipsometry Studies of Optical Parameters Changes of Indium-Implanted and Annealed GaAs Substrates. Proc. of the 16th Woollam Ellipsometry Sem. (WES_16). Darmstadt, Germany, 23-24.10.2008 (in press).
• [P25] YASTRUBCHAK O., DOMAGAŁA J., SADOWSKI J., KULIK M., ŻUK I, RZODKIEWICZ W., SZYMCZAK R., WOSIŃSKI T.: Modification of the Magnetic, Structural and Optical Properties of (Ga, Mn) As Epitaxial Films by Ion Implantation. Vacuum (in press).
• Conferences'2008
• [C1] BARAŃSKA A., PAPIS E., SZERLING A., KARBOWNIK P., WÓJCIK-JEDLIŃSKA A., KOSIEL K., KUBACKA-TRACZYK J., BUGAJSKI M., RZODKIEWICZ W., WAWRO A., SZADE J.: Complementary Study pf (100) GaAs Surface Ion Etching Treatment for Application in Quantum Cascade Lasers. Semiconductor Laser Workshop (SELAWO08). Lublin, Poland, 1-2.12.2008 (commun.).
• [C2] BOROWICZ L., RZODKIEWICZ W., BOROWICZ P., KULIK M.: Investigations of Physical Properties of SiO2 Layer dunder the Aluminium. VII Polish Conf. on Electronics (KKE2008). Darłówko, Poland, 2-4.06.2008 (poster).
• [C3] BORYSIEWICZ M., KAMIŃSKA E., PIOTROWSKA A., KWIETNIEWSKI N., PASTERNAK I., KRUSZKA R., GUZIEWICZ M., RZODKIEWICZ W., DI FORTE-POISSON M.-A., DELAGE S., LAHRECHE H., DYNOWSKA E.: Surface Passivation of AlGaN/GaN Heterostructures Using ZnO-Based Dielectrics and Its Application to HEMTs. 17th Int. Conf. on Microwaves, Radar and Wireless Communications MIKON 2008 (MIKON08). Wrocław, Poland, 19-21.05.2008 (inv. lect,).
• [C4] CZAJKA B., LECH D., ŁAPIŃSKI A., PIETROWSKI M., WACHOWSKI L., RZODKIEWICZ W.: Methods of Studying Surface Layers of Iron Powders Used in High-Energy Mixtures/Blends. V Int. Conf. IPOEX 2008 (IPOEX08). Ustroń-Jaszowiec, Poland, 10-12.06.2008 (paper, in Polish).
• [C5] CZAJKA B., WACHOWSKI L., PIETROWSKI M., ŁAPIŃSKI A., RZODKIEWICZ W.: Application of Spectroscopic Methods to Study High-Dispsergence Iron as a Component of High-Energy Mixture/Blend. Polish Symp. „Science and Industry - Spectroscopic Methods in Practice” (OSNPMSP). Lublin, Poland, 18-20.06.2008 (paper, in Polish).
• [C6] GUTT T.: Correlation of Interface Trap Characteristics in SiC:SiO2 with the Equivalent Circuit Parameters of a MOS Capacitor. 31st Int. Convention MIPRO - Conf. on Micro-Electronics, Electronics, and Electronic Technologies (MEET). Opatija, Kroatia, 26-30.05.2008 (paper).
• [C7] GUTT T., PRZEWŁOCKI H. M.: The Influence of the Conditions of Thermal Oxidation and Post-Metallization Annealing on the Presence of Edge Traps in SiC:SiO2- VII Polish Conf. on Electronics (KKE2008). Darłówko, Poland, 2-4.06.2008 (inv. lect., in Polish).
• [C8] KARBOWNIK P., BARAŃSKA A., SZERLING A., PAPIS E., WÓJCIK-JEDLIŃSKA A., KOSIEL K., KUBACKA-TRACZYK J., BUGAJSKI M., RZODKIEWICZ W., WAWRO A., SZADE J.: Improvement of n-Type Ohmic Contact Resistance for GaAs/AlGaAs Quantum Cascade Lasers by Optimisation of Surface Pretreatment. Semiconductor Laser Workshop (SELAWO08). Kazimierz Dolny, Poland, 1-2.12.2008 (commun.).
• [C9] KRZYŻANOWSKA H., KULIK M., ŻUK J., RZODKIEWICZ W., KOBZEV A. P., SKORUPA W.: Optical Investigations of Germanium Nanoclusters-Rich SiO2 Layers Produced by Ion Beam Synthesis. 5th Int. Conf. on Functional and Nanostructured Materials (ICFNM5). Lviv, Ukraine, 31.08-6.09.2008 (paper).
• [C10] KRZYŻANOWSKA H., ŻUK J., FELIKS J., KULIK M., RZODKIEWICZ W.: Optical Constants for Low Ion Fluence Implanted GaAs Determined by Differential Reflectance and Spectroscopic Ellipsometry. VII Int. Conf. on ION Implantation and Other Applications of IONS and Electrons (ICION08). Kazimierz Dolny, Poland, 16-19.06.2008 (poster).
• [C11] KULIK M., RZODKIEWICZ W., ŻUK J., KRZYŻANOWSKA H., KOBZEV A. P., SKORUPA W.: Dielectric Function of Doubly Implanted Ge+ - Implanted and Annealed SiO2 Layers. VII Int. Conf. on ION Implantation and Other Applications of IONS and Electrons (ICION08). Kazimierz Dolny, Poland, 16-19.06.2008 (paper).
• [C12] KULIK M., RZODKIEWICZ W., ŻUK J., MĄCZKA M.: Optical Parameters Changes of In+- Implanted and Annealed GaAs: Spectroscopic Ellipsometry Study. VII Int. Conf. on ION Implantation and Other Applications of IONS and Electrons (ICION08). Kazimierz Dolny, Poland, 16-19.06.2008 (poster).
• [C13] KULIK M., ŻUK J., KRZYŻANOWSKA H., KOBZEV A. P., SKORUPA W., RZODKIEWICZ W.: Ellipsometric and RBS Studies of Germanium Nanoclusters-Rich SiO2 Layers Produced by Ion Beam Synthesis. Int. Conf. on Radiation Interaction with Material and Its Use in Technologies 2008 (ICRIMUT08). Kaunas, Lithuania, 24-27.09.2008 (paper).
• [C14] KWIETNIEWSKI N., GOŁASZEWSKA-MALEC K., PIOTROWSKI T. T., RZODKIEWICZ W., GUTT T., SOCHACKI M., SZMIDT J., PIOTROWSKA A.: Oxidation Process of SiC by RTP Technique. 7th Europ. Conf. on Silicon Carbide and Related Materials (ECSCRM7). Barcelona, Spain, 7-11.09.2008 (poster).
• [C15] PASTERNAK L., KAMIŃSKA E., PIOTROWSKA A., BORYSIEWICZ M., PRZEŹDZIECKA E., DYNOWSKA E., ŁUSAKOWSKA E., KOWALCZYK E., RZODKIEWICZ W.: High Quality Sputter-Deposited Undoped ZnO Films for Sensors and Electronic Devices. XXXVII Int. School on the Physics of Semiconducting Compounds (ISPSC-37). Jaszowiec, Poland, 7-13.06.2008 (poster).
• [C16] PISKORSKI K.: Photoelectric Methods to Determine Distributions of Parameter Values Over the Gate Area of MOS Devices. 38th Europ. Solid State Device Research Conf. ESSDERC and 34th Europ. Solid State Circuits Conf. ESSCIRC. Edinburgh, United Kingdom, 15-19.09.2008 (poster).
• [C17] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Local Values of Flat-Band Voltage in Al-SiO2-Si Structures. 31st Int. Convention MIPRO - Conf. on Micro-Electronics, Electronics, and Electronic Technologies (MEET). Opatija, Kroatia, 26-30.05.2008 (paper).
• [C18] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Local Values of Flat-Band Voltage in Al-SiO2-Si Structures. VII Polish Conf. on Electronics (KKE2008). Darłówko, Poland, 2-4.06.2008 (poster).
• [C19] PISKORSKI K., PRZEWŁOCKI H. M.: Investigation of Flat-Band Voltage Distributions Over the Gate Area of AlSiO2-Si Structures. EMRS Fall Meet. (EMRS08F). Warsaw, Poland, 15-19.09.2008 (poster).
• [C20] PRZEWŁOCKI H. M.: Silicon-Based Nanoelectronics - Limitations and Ways to Overcome Them. 652. Meet. of Polish Physics Soc. (PPTF652). Lublin, Poland, 10-10.04.2008 (inv. lect.).
• [C21] PRZEWŁOCKI H. M., GUTT T.: Development of Methods of Characterization of the Parameters of SiC Substrates and Their Interfaces with Other Materials and Application to Study trie Structures Fabricated in the Government Research Project. Seminar after the first stage of PBZ-MeiN 6/2/2008 (SSOJ)8). Warsaw, Poland, 5.03.2008 (inv. lect., in Polish).
• [C22] PRZEWŁOCKI H. M., GUTT T., MAŁACHOWSKI T., KWIETNIEWSKI N., BĄKOWSKI M.: Development of Methods of Characterization of the Parameters of SiC Substrates and Their Interfaces with Other Materials and Application to Study the Structures Fabricated in the Government Research Project. Seminar after the first stage of PBZ-MeiN 6/2/2008 (SSOPBZ). Warsaw, Poland, 3.11.2008 (inv. Lect., in Polish).
• [C23] RZODKIEWICZ W., BOROWICZ L., BOROWICZ P., GUZIEWICZ M., KULIK M.: Studies of Physical Properties of MIS Structures with Aluminium Gate. Photon 2008 (PHOTON2008). Edinburgh, United Kingdom, 25-29.08.2008 (paper).
• [C24] RZODKIEWICZ W., KULIK M.: Spectroscopic Ellipsometry Studies of Optical Parameters Changes of Indium-Implanted and Annealed GaAs Substrates. 16th Woollam Ellipsometry Sem. (WES_16). Darmstadt, Germany, 23-24.10.2008 (paper).
• [C25] YASTRUBCHAK O., DOMAGAŁA J., SADOWSKI J., KULIK M., ŻUK J., RZODKIEWICZ W., SZYMCZAK R., WOSIŃSKI T.: Influence of Ion Implantation on Magnetic, Structural and Optical Properties of (Ga, Mn) as Epitaxial Films. XXXVII Int. School on the Physics of Semiconducting Compounds (ISPSC-37). Jaszowiec, Poland, 7-13.06.2008 (commun.).
• [C26] YASTRUBCHAK O., DOMAGAŁA J., SADOWSKI J., KULIK M., ŻUK J., RZODKIEWICZ W., SZYMCZAK R., WOSIŃSKI T.: Modification of the Magnetic, Structural and Optical Properties of (Ga, Mn) As Epitaxial Films by Ion Implantation. VII Int. Conf. on ION Implantation and Other Applications of IONS and Electrons (ICION08). Kazimierz Dolny, Poland, 16-19.06.2008 (poster).
• [C27] ŻUK K., KRZYŻANOWSKA H., KULIK M., CLOUTER M., RZODKIEWICZ W.: On the Use of Surface Brillouin Scattering and Ellipsometry for Elastic Characterization of Ion Implanted Materials. Winter School on Wave and Quantum Acoustics (WSWQA08). Wisła, Poland, 25-29.02.2008 (paper).
• [C28] ŻUK J., KRZYŻANOWSKA H., KULIK M., CLOUTER M., RZODKIEWICZ W.: Elastic Characterization of Ion Implanted Layers by Brillouin Scattering from Surface Acoustic Waves. 16th Int. Conf. on Ion Beam Modification of Materials (IBMM 08). Dresden, Germany, 31.08-5.09.2008 (poster).