Zastosowanie wysokorezystywnego azotku galu do wytwarzania heterostruktur AlGaN/GaN HEMT

• Autorzy: Miczuga M.

Warianty tytułu

EN

Application of high-resistivity gallium nitride for fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs)

• Języki publikacji: PL

Abstrakty

PL

Unikalne właściwości azotku galu (GaN) i roztworów stałych na jego bazie stwarzają możliwość produkcji nowej generacji przyrządów półprzewodnikowych. Tranzystory HEMT, w których stosuje się warstwę epitaksjalną wysokorezystywnego azotku galu charakteryzują się dużym współczynnikiem wzmocnienia i możliwością pracy w zakresie bardzo wysokich częstotliwości. Znajdują one coraz szersze zastosowanie we współczesnych systemach elektronicznych. Celem pracy jest przedstawienie problemów materiałowych związanych z wytwarzaniem tranzystorów HEMT z wykorzystaniem heterostruktur AlGaN/GaN oraz zaproponowanie metody charakteryzacji centrów defektowych w warstwach epitaksjalnych GaN. Omówiono budowę sieci krystalicznej oraz właściwości aplikacyjne azotku galu. Opisano strukturę tranzystora HEMT ze szczególnym uwzględnieniem właściwości elektrycznych i strukturalnych wysokorezystywnej warstwy buforowej GaN. Pokazano znaczenie jakości warstwy epitaksjalnej wysokorezystywnego GaN w tranzystorze HEMT. Przedstawiono wpływ rodzaju podłoża na gęstość dyslokacji w warstwie GaN. Zaproponowano sposób charakteryzacji centrów defektowych w warstwach epitaksjalnych GaN. Przedstawiono strukturę defektową warstwy epitaksjalnej GaN dla tranzystora HEMT osadzonej na podłożu Al2O3.

EN

Unique properties of gallium nitride (GaN) create the possibility for production of the new generation of semiconductor devices. The AlGaN/GaN HEMT structures with a layer of highresistivity GaN enable high gain at high operational frequencies to be achieved. This layer is used to separate the device active layer, usually doped with silicon, from the nucleation layer with a high defect density. Moreover, the semiinsulating properties of the layer minimize power losses of the microwave signal. An important advantage of the AlGaN/GaN heterostructure is that it makes possible a large charge to be flowed through the channel, which allows for the transistor's work at higher current densities. Simultaneously, the high breakdown voltage makes the AlGaN/GaN HEMTs very suitable for applications in high power circuits. The quality of the high-resistivity GaN epitaxial layer is of great importance in terms of HEMTs operational characteristics. This quality is determined mainly by the density and properties of lattice defects, in particular dislocations, as well as extrinsic and intrinsic point defects. The extrinsic defects are related to atoms of impurities introduced in uncontrollable way. The intrinsic defects, such as vacancies, interstitials and antisites, are formed by shifting the native atoms from their regular positions in the crystal lattice. Epitaxial layers of GaN are usually obtained by Metal-Organic Chemical Vapor Deposition (MOCVD). An important factor affecting the layer quality is the type of substrate material, which determines the lattice mismatch between the substrate and epitaxial layer. At present, three types of substrates are used: sapphire, SiC, and free-standing GaN. The most effective method for characterizing defect centers in semi-insulating materials is now the Photoinduced Transient Spectroscopy (PITS). It is based on measuring the photocurrent relaxation waveforms observed after switching off the UV pulse generating excess charge carriers. The relaxation waveforms are recorded in a wide range of temperatures (30-700 K) and in order to extract the parameters of defect centers, the temperature changes in the relaxation rate are analyzed. The depth of the region in which the traps are filled with charge carriers is dependent on the absorption coefficient, influencing the distribution of excess charge carriers in the steady state, at the moment of the UV pulse termination. The defect centres taking part in the charge compensation occurring in high resistivity GaN epitaxial layers forming the buffer layers for HEMTs have been found. The obtained results indicate that the compensation is due to native defects, as well as due to compensation with Si, C, O, and H atoms.

Słowa kluczowe

PL

przyrządy półprzewodnikowe; HEMT; GaN; PITS; centra defektowe

EN

semiconductor devices; HEMT; GaN; PITS; defect centers

• Wydawca: Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Biuletyn Wojskowej Akademii Technicznej
• Rocznik: 2009
• Tom: Vol. 58, nr 1
• Strony: 207--233
• Opis fizyczny: Bibliogr. 37 poz., tab., wykr.

Twórcy

autor

Miczuga M.

• Wojskowa Akademia Techniczna, Instytut Optoelektroniki, 00-908 Warszawa, ul. S. Kaliskiego 2

Bibliografia

• [1] S. Wu, R. T. Webster, A. F. M. Anwar, Physic-based intrinsic model for AlGaN/GaN HEMTs, MRS Internet J. Nitride Semiconductors Res., 4S1, G6.58 1999.
• [2] S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren, GaN: Processing, defects, and devices, J. Appl. Phys., 86, no 1, 1999, 1-69.
• [3] I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, S. Porowski, High Pressure Crystallization of GaN, Nitride Semiconductors Handbookon Materials and Devices, ed by P. Ruterana, M. Albrecht and J. Neugabauer, 2003, 1-44.
• [4] B. Schineller, Vertical HVPE tool produces 2inch GaN, Compound Semiconductor, September, 22-23.2007.
• [5] A. Dagar, M. Poschenrieder i in., MOVPE growth of GaN on Si (111) substrates, Journal of Crystal Growth, 248, 2003, 556-562.
• [6] J. Hennel, Podstawy elektroniki półprzewodnikowej, WNT, Warszawa 1986.
• [7] M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, T. D. Moustakas, Thermal expansion of gallium nitride, J. Appl. Phys., 76, 8, 1994, 4909-4911.
• [8] J. Lagerstedt, O. Monemar, Luminescence in epitaxial GaN:Cd , J. Appl. Phys. 45, 1974, 2266.
• [9] T. P Chow, M. Ghezzo, SiC power devices in III-Nitride, SiC, and Diamond Materials for Electronic Devices, Eds. Gaskill D. K, Brandt C. D. and Nemanich R. J., Material Research Society Symposium Proceedings, Pittsburgh, PA. 423, 1996, 69-73.
• [10] V. Bougrov, M. E. Levinshtein, S. L. A. Rumyantsev, Zubrilov, in: Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, eds. Levinshtein M. E., Rumyantsev S. L., Shur M. S., John Wiley & Sons, Inc., New York, 2001, 1-30.
• [11] S. Porowski, Growth and properties of single crystalline GaN substrates and homoepitaxial layers, Mater. Sci. Eng., B 44, 1997, 407-413.
• [12] U. K. Mishra, P. Parikh, Y. F. Wu, AlGaN/GaN HEMTs: An overview of device operation and application, http://my.ece.ucsb.edu/mishra/classfi les/overview.pdf.
• [13] S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren, GaN: Processing, defects, and devices, J. Apll. Phys., 86, no 1, 1999, 1-78.
• [14] W. Qian, M. Skowronski, G. R. Rohrer, Structural defects and their relationship to nucleation of GaN thin fi lm. in III-Nitride, SiC, and Diamond Materials for Electronic Devices, eds. Gaskill D. K, Brandt C. D. and Nemanich R. J., Material Research Society Symposium Proceedings, Pittsburgh, PA., 423, 1996, 475-486.
• [15] S. Arulkumaran, G. Ng i in., Enhancement of both direct-current and microwave characteristic of AlGaN/GaN high-electron-mobility transistors by furnace annealing, Appl. Phys. Letters, 88, 2006, 023502-023502-3.
• [16] A. Krost, A. Dagar, GaN-based electronics on silicon substrates, Materials Science and Engineering B93, 2002, 77-84.
• [17] K. Kumakura, T. Makimoto, Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3, Journal of Crystal Growth, vol. 292, Issue 1, 2006, 155-158.
• [18] N. D. Bassim , M. E. Twigg, M. A. Mastro, C. R. Eddy, Jr., T. J. Zega, R. L. Henry, J. C. Culbertson, R. T. Holm, P. Neudeck, J. A. Powell, A. J. Trunek, Dislocations in III-nitride films grown on 4H - SiC mesas with and without surface steps, Journal of Crystal Growth, vol. 304, Issue 1, 2007, 103-107.
• [19] D. Wang , Y. Dikme, S. Jia, K. J. Chen , K. M. Lau, P. van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, M. Heuken, Characterization of GaN grown on patterned Si(111) substrates, Journal of Crystal Growth, vol. 272, Issue 1-4, 2004, 489-495.
• [20] M. Pawłowski, P. Kamiński, R. Kozłowski, S. Jankowski, M. Wierzbowski, Intelligent measuring system for characterization of defect centres in semi - insulating materials by photoinduced transient spectroscopy, Metrology and Measurement Systems, vol. XI, no. 2, 2005, 207-228.
• [21] M. Pawłowski, Dwuwymiarowość widm w niestacjonarnej spektroskopii fotoprądowej, Materiały Elektroniczne ITME, 28, 2000, 18-30.
• [22] M. Pawłowski, M. Miczuga, P. Kamiński, R. Kozłowski, Analysis of two - dimensional PITS spectra for characterization of defect centers in high resistivity materials, International Conference on Solid State Crystals '00, 9-13 October 2000, Zakopane, Proc. SPIE, Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, vol. 4413, 2001, 208-213.
• [23] M. Pawłowski, M. Miczuga, Zastosowanie procedury korelacyjnej z wieloimpulsowymi funkcjami wagowymi do dwuwymiarowej analizy widmowej w niestacjonarnej spektroskopii fotoprądowej PITS, Materiały Elektroniczne nr 3/4, t. 29, 2001, 5-19.
• [24] R. I. Bube, Photoelectronic properties of semiconductors, Cambridge University Press, 1992.
• [25] N. Armani, V. Grillo, G. Salviati, M. Manfredi, M. Pavesi, A. Chini, G. Meneghesso, E. Zanoni, Characterization of GaN-based metal - semiconductor field - effect transistors by comparing electroluminescence, photoionization, and cathodeluminescence spectroscopies, J. Appl. Phys., 92, 2002, 2401.
• [26] F. Mireles, S. E. Ulloa, Zeeman splitting of shallow donors in GaN, Appl. Phys. Lett., 74, 1999, 248.
• [27] M. A. Reshchikov, H. Morkoc, Luminescence properties of defects in GaN, J. Appl. Phys., 97, 2005, 061301.
• [28] C. G. Van de Walle, J. Neugebauer, First-principles calculations for defects and impurities: Applications to III-nitrides, J. Appl. Phys., 95, 2004, 3851.
• [29] A. Armstrong, A. R. Arehart, D. Green, U. K. Mishra, J. S. Speck, S. A. Ringel, Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon, J. Appl. Phys., 98, 2005, 053704.
• [30] U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski, Studies on carbon as alternative p-type, MRS Internet J. Nitride Semicond. Res., 4S1, G5.6, 1999.
• [31] A. F. Wright, Substitutional and interstitial carbon in wurtzite GaN, J. Appl. Phys., 92, 2002, 2575.
• [32] D. J. Chadi, Atomic origin of deep levels in p - type GaN: Theory, Appl. Phys. Lett., 71, 1997, 2970-2971.
• [33] J. M. Gregie, R. Y. Korotkov, B. W. Wessels, Deep Level Formation in Undoped and Oxygen Doped GaN, Mat. Res. Soc. Symp., 639, G11.56.1, 2001.
• [34] X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee G. C. Chi, S. J. Chang, Deep level defect in Si implanted GaNn+-p junction, Appl. Phys. Lett., 82, 2003, 3671.
• [35] O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, A. Hoffman, Formation and dissociation of hydrogen related defect centers in Mg doped GaN, Mat. Res. Soc. Symp. Proc., vol 798, Y5.20.1, 2004.
• [36] J. Neugebauer, C. G. Van de Walle, Role of hydrogen in doping of GaN, Appl. Phys. Lett., 66, 1996, 1929.
• [37] V. J. B. Torres, S. Oberg, R. Jones, Theoretical studies of hydrogen passivated substitution magnesium acceptor in wurzite GaN, MRS Internet. J. Nitride Semicond. Res., 2, Article 35, 1997.