Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality

• Autorzy: Gaca J. , Wójcik M. , Jasik A. , Pierściński K. , Kosmala M. , Turos A. , Abdul-Kaderd A. M.
• Konferencja: The Fifth International Conference on Solid State Crystals (ICSS-5 ) ; (5 ; 20-24.05.2007 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

GaAs/AlAs Bragg mirrors on GaAs with varied number of layer pairs were grown, by molecular beam epitaxy (MBE), to be applied for semiconductor saturable absorber mirrors (SESAMs) and intensity modulators. Due to the random variation of the growth rate, substrate surface roughness, and interdiffusion at the interfaces, precise control of the growth conditions of deposited layers poses a serious problem. Usually, thickness variations and composition grading at the heterointefaces result in variations of the mirror reflectivity. In this paper, the high resolution X-ray diffraction (HRXRD), optical reflectance, Rutherford backscattering/channelling (RBS), supported by numerical evaluation methods were employed to determine both the exact thickness of each layer and the composition grading at the interface between succeeding layers of GaAs/AlAs-based mirrors. To reduce ambiguity and to speed up the analysis, the rocking curves and RBS spectra were simulated concurrently, using results of one simulation to verify the others. This process was carried out until the best fit between experimental and calculated curves was achieved. The complementary use of both methods results in improved sensitivity and makes the whole process of evaluation of the thickness variation of each layer and the size of the composition grading at the interfaces less time consuming.

Słowa kluczowe

EN

DBR; MBE; HRXRD; RBS spectrum; random thickness variation; reflectivity

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2008
• Tom: Vol. 16, No. 1
• Strony: 12--17
• Opis fizyczny: Bibliogr. 11 poz., wykr.

Twórcy

autor

Gaca J.

autor

Wójcik M.

autor

Jasik A.

autor

Pierściński K.

autor

Kosmala M.

autor

Turos A.

autor

Abdul-Kaderd A. M.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland,

Bibliografia

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