Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

• Autorzy: Ściana B. , Zborowska-Lindert I. , Pucicki D. , Boratyński B. , Radziewicz D. , Tłaczała M. , Serafińczuk J. , Poloczek P. , Sęk G. , Misiewicz J.
• Konferencja: The Fifth International Conference on Solid State Crystals (ICSS-5 ) ; (5 ; 20-24.05.2007 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

The nitrogen-containing A^IIIB^V semiconductor alloys, so-called diluted nitrides (A^IIIB^V-N, have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs_1-xN_xGaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated.

Słowa kluczowe

EN

diluted nitrides; atmospheric pressure metal organic vapour phase epitaxy technique; AP MOVPE; GaAsN/GaAs metal-semiconductor-metal photodetectors; DC I-V characteristics; spectral response

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2008
• Tom: Vol. 16, No. 1
• Strony: 1--7
• Opis fizyczny: Bibliogr. 10 poz., wykr.

Twórcy

autor

Ściana B.

autor

Zborowska-Lindert I.

autor

Pucicki D.

autor

Boratyński B.

autor

Radziewicz D.

autor

Tłaczała M.

autor

Serafińczuk J.

autor

Poloczek P.

autor

Sęk G.

autor

Misiewicz J.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland,

Bibliografia

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• 6. R. Kudrawiec, "Photoreflectance and photoluminescence investigations of nitrogen diluted III-V alloys and their low dimensional structures", Ph.D. Thesis, Institute of Physics, Wrocław University of Technology, 2004.
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• 8. H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki, and K. Onabe, "Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys", Phys. Stat. Sol. 228, 273 (2001).
• 9. I.A. Buyanova, W.M. Chen, and C.W. Tu, "Magneto-optical and light-emission properties of III-As-N semiconductors", Semicond. Sci. Technol. 17, 815 (2002).
• 10. B. Ściana, D. Pucicki, D. Radziewicz, J. Serafińczuk, J. Kozłowski, B. Paszkiewicz, M. Tłaczała, P. Poloczek, G. Sęk, and J. Misiewicz, "APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures", Vacuum 82, 377 (2008).