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Wavelength and polarization selective multi-band tunnelling quantum dot detectors

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Języki publikacji
EN
Abstrakty
EN
The reduction of the dark current without reducing the photocurrent is a considerable challenge is developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The work reported here discusses multi-band tunnelling quantum dot infrared photo detector (T-QDIP) structures designed for high temperature operation covering the range from mid- to far-infrared. These structures grown by molecular beam epitaxy consist of a QD (InGaAs or InAlAs) placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it. The photocurrent, which can be selectively collected by resonant tunnelling, is generated by a transition of carriers from the ground state in the QD to a state in the well coupled with a state in the double-barrier system. The double-barrier system blocks the majority of carriers contributing to the dark current. Several important properties of T-QDIP detectors such as the multi-colour (multi-band) nature of the photoresponse, the selectivity of the operating wavelength by the applied bias, and the polarization sensitivity of the response peaks, are also discussed.
Twórcy
autor
autor
  • Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA, uperera@gsu.edu
Bibliografia
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  • 5. P. Bhattacharya, X.H. Su, S. Chakrabarti, G. Ariyawansa, and A.G.U. Perera, "Characteristics of a tunnelling quantum-dot infrared photo detector operating at room temperature", Appl. Phys. Lett. 86, 191106 (2005).
  • 6. X.H. Su, J. Yang, P. Bhattacharya, G. Ariyawansa, and A.G.U. Perera, "Terahertz detection with tunnelling quantum dot intersublevel photodetector", Appl. Phys. Lett. 89, 031117(2006).
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA9-0012-0015
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