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We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al₀.₀₇Ga₀.₉₃N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the "S-shape" dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition.
Wydawca
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Rocznik
Tom
Strony
163--167
Opis fizyczny
Bibliogr. 21 poz., wykr.
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autor
autor
autor
autor
autor
autor
autor
autor
autor
- Departament of Physics, Islamic Azad University, Shahrood Branch, Shahrood, Iran, saboonim@walla.com
Bibliografia
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- 4. M. Esmaeili, H. Haratizadeh, B. Monemar, P.P. Paskov, P.O. Holtz, P. Bergman, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, "Photoluminescence study of MOCVD - grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping", Nanotechnology 17, 1-6 (2006).
- 5. A. Hangleiter, J.S. Im, H. Kollmer, S. Hepple, J. Off, and F. Scholz, "The role of piezoelectric fields in GaN - based quantum wells", MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).
- 6. I.S. Im, H. Kollmer, J. Off, J. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells", Phys. Rev. B57, R9435(1998).
- 7. P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, P. Bigenwald, and N. Grandjean, "Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells", Phys. Rev. B59, 15363 (1999) and references cited there in.
- 8. M. Leroux, N. Grandjean, M. Laugt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, "Quantum confined stark effect due to built-in internal polarization fields in (Al, Ga)N/GaN quantum wells", Phys. Rev. B58, R13371 (1998).
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- 12. A. Reale, G. Massari, A. Di Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, and J. Massies, "Polarization field effects on the recombination dynamics in low-in-content InGaN multi-quantum wells", J. Appl. Phys. 93, 400 (2003).
- 13. K.C. Zeng, J.Y. Lin, H.X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, and H. Morkoc, "Achieving highly conductive AlGaN alloys with high Al contents", Appl. Phys. Lett. 71, 1368 (1997).
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- 18. M. Gallart, M. Morel, T. Taliercio, B. Gil, J. Allegre, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, "Reduction of carrier in-plane mobility in group-III nitride based quantum wells: the role of internal electric fields", Phys. Stat. Sol. (a) 183, 61 (2001).
- 19. P. Paskov, P.O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, "Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells", Phys. Stat. Sol. (b) 234, 755 (2002).
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA9-0012-0007