Novel gas sensor based on porous silicon measured by photovoltage, photoluminescence, and admittance spectroscopy

• Autorzy: Bratkowski A. , Korcala A. , Łukasiak Z. , Borowski P. , Bała W.
• Języki publikacji: EN

Abstrakty

EN

Porous silicon (PSi) layer as gas sensor, based on the change in photoconductivity, photoluminescence and admittance has been presented. PSi layer was prepared by electrochemical dissolution of p-type silicon wafer in HF. Photovoltage curves, photoluminescence spectra (PL) and admittance spectra have been measured in different gas concentrations. Photoconductivity (PC) spectra in vacuum and different gas atmosphere have been compared. Changes of photovoltage intensity curves and change of PC spectra versus concentration of vapour have been observed.

Słowa kluczowe

EN

porous silicon; gas sensors; photocurrent

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2005
• Tom: Vol. 13, No. 1
• Strony: 35--38
• Opis fizyczny: Bibliogr. 7 poz., rys., wykr.

Twórcy

autor

Bratkowski A.

• Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland

autor

Korcala A.

• Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland

autor

Łukasiak Z.

• Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland

autor

Borowski P.

• Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland

autor

Bała W.

• Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland

Bibliografia

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