PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Effect of heat treatment at enhanced pressure on electrical and structural properties of silicon surface layer co-implanted with hydrogen and helium ions

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Electrical and structural properties of silicon surface layer created by high pressure annealing of hydrogen and helium co-implanted silicon were investigated by current and capacitance measurements of Schottky barrier junction Hg-Si (mercury probe), cross-sectional transmission electron microscopy and SIMS analysis. The most striking result is finding that hydrogen and helium co-implantation leads to shallow donors generation and changes in the type of conductivity even for low concentration of oxygen in silicon. High pressure thermal anneals result in additional donor formation in the implanted silicon surface layer.
Twórcy
autor
  • Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland
autor
  • Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland
autor
  • Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland
autor
  • Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland
Bibliografia
  • 1. M. Bruel, “A new silicon on insulator material technology”, Electron. Lett. 31, 1201–1202 (1995).
  • 2. A. Agarwal, T.E. Haynes, V.C. Venezia, O.W. Holland, and D.J. Eagleshman, “Efficient production of silicon-on-insulator films by co-implantation of He+ with H+”, Appl. Phys. Lett. 72, 1086–1088 (1998).
  • 3. A. Misiuk, J. Bąk-Misiuk, M. Kaniewska, K.S. Zhuravlev, V. Raineri, and I.V. Antonova, “Nanostructured layers in high temperature-pressure treated silicon implanted with hydrogen/helium”, Mater. Phys. Mech. 5, 31–38 (2002).
  • 4. A. Misiuk, J. Bąk-Misiuk, I.V. Antonova, V. Raineri, A. Romano-Rodriguez, A. Bachrouri, H.B. Surma, J. Ratajczak, J. Kątcki, J. Adamczewska, and E.P. Neustroev, “Effect of uniform stress on silicon implanted with helium, hydrogen, and oxygen”, Comput. Mater. Sci. 21, 515–525 (2001).
  • 5. A. Misiuk, A. Barcz, V. Raineri, J. Ratajczak, J. Bąk-Misiuk, I.V. Antonova, W. Wierzchowski, and K. Wieteska, “Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen”, Physica B308/310, 317–320 (2001).
  • 6. A. Misiuk and W. Jung, “The effect of pressure on the concentration of thermal donors in Czochralski grown silicon”, Phys. Stat. Sol. (b) 198, 565–568 (1996).
  • 7. V.V. Emtsev, B.A. Andreev, A. Misiuk, W. Jung, and K. Schmalz, “Oxygen aggregation in Czochralski-grown silicon heat treated at 450C under compressive stress”, Appl. Phys. Lett. 71, 264–266 (1997).
  • 8. A. Misiuk, A. Barcz, J. Ratajczak, and J. Bąk-Misiuk, “Effect of external stress at annealing on microstructure of silicon co-implanted with hydrogen and helium”, Solid St. Phen. 95/96, 313–318 (2004).
  • 9. W. Jung and K. Klima, “Determination of distributions of carriers and ionised dopants on the basis of C-V measurements”, Prace ITE 9, 12–24 (1982). (in Polish).
  • 10. J. Kiszkurno and W. Jung, “Integrated system for research and development works in the field of integrated circuits technology”, Proc. 6th Symp. Microcomputer and Microprocessor Applications, pp. 25–32, Budapest, 1989.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0015-0055
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.