Effect of heat treatment at enhanced pressure on electrical and structural properties of silicon surface layer co-implanted with hydrogen and helium ions

• Autorzy: Jung W. , Misiuk A. , Ratajczak J. , Barcz A.
• Języki publikacji: EN

Abstrakty

EN

Electrical and structural properties of silicon surface layer created by high pressure annealing of hydrogen and helium co-implanted silicon were investigated by current and capacitance measurements of Schottky barrier junction Hg-Si (mercury probe), cross-sectional transmission electron microscopy and SIMS analysis. The most striking result is finding that hydrogen and helium co-implantation leads to shallow donors generation and changes in the type of conductivity even for low concentration of oxygen in silicon. High pressure thermal anneals result in additional donor formation in the implanted silicon surface layer.

Słowa kluczowe

EN

silicon; hydrogen implantation; helium implantation; SOI; smart-cut process

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2005
• Tom: Vol. 13, No. 1
• Strony: 31--34
• Opis fizyczny: Bibliogr. 10 poz., rys., wykr.

Twórcy

autor

Jung W.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Misiuk A.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Ratajczak J.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Barcz A.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

Bibliografia

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