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Tytuł artykułu

Distribution of potential barrier height local values at Al-SiO₂ and Si-SiO₂ interfaces of the metal-oxide-semiconductor (MOS) structures

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EN
Abstrakty
EN
Using the photoelectric measurement methods distributions have been determined of the gate-dielectric EBG(x,y) and semiconductor-dielectric EBS(x, y) barrier height values in square gate (1 x 1 mm²) AI-SiO₂Si(n⁺) structures. Measurements have been made on a series of 26 MOS capacitors with semitransparent gates (tAl= 35 nm), on one silicon wafer. Barrier heights were measured using the modified Powell-Berglund and the modified Fowler methods. Measurement methods were modified in such a way as to allow determination of EBG(x,y) and EBS(x,y) distributions, as described in the text. It has been found that the EBG(x,y) distribution has a characteristic dome-like shape which is identical with the independently determined shape of the effective contact potential difference φMS(x,y) distribution. The EBS(x,y) distribution is of a random character and differences between highest and lowest values of EBS for any of the measured capacitors are much smaller than the respective differences in EBG values. These results show that it is the gate-dielectric barrier height distribution EBG(x,y) which causes the dome-like shape of the FMS(x,y) distribution, observed for several years in our laboratory. This finding supports aur hypothesis that the characteristic FMS(x,y) distribution over the gate area of Al-SiO₂-Si structures resuIts from the mechanical stress distribution under the gate electrode.
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1--5
Opis fizyczny
Bibliogr. 12 poz., wykr.
Twórcy
autor
  • lnstitute of ElectronTechnology, al. Lotników 32/46, 02-668 Warszawa, Poland
  • lnstitute of ElectronTechnology, al. Lotników 32/46, 02-668 Warszawa, Poland
Bibliografia
  • 1. H. M. Przewłocki, A. Kudla, D. Brzezińska, H. Z. Massoud, Distribution of the Contact-Potential Difference Local Values over the Gate Area of MOS Structures, Microelectron. Eng., 2004, 72, 165-173.
  • 2. A. Kudla, H. M. Przewłocki, L. Borowicz, D. Brzezińska, W. Rzodkiewicz, Photoelectric Measurements of the Local Value of the Contact-Potential Difference in Metal-Insulator-Semiconductor (MIS) Structures, Thin Solid Films, 2004, 450, 203-206.
  • 3. H. M. Przewłocki, Theory and Applications of Internal Photoemission in the MOS System at Low Electric Fields, Solid St. Electron., 2001,45, 1241-1250.
  • 4. S. M. Hu, Stress Related Problems in Silicon Technology, J. Appl. Phys., 1991, 70, R53-R80.
  • 5. I. De Wolf, H. E. Maes, S. K. Jones, Stress Measurements in Silicon Devices THROUGH Raman Spectroscopy: Bridging the Gap between Theory and Experiment, J. Appl. Phys., 1996, 79, 7148-7156.
  • 6. K. F. Dombrowski, I. De Wolf, B. Dietrich, Stress Measurements Using Ultraviolet Micro-Raman Spectroscopy, Appl. Phys. Lett., 1999, 75, 2450-2451.
  • 7. E. H. Nicollian, J. R. BREWS, MOS (Metal Oxide Semiconductor) Physics and Technology. John Wiley, New York, 1982.
  • 8. R. J. Powell, C. N. Berglund, Photoinjection into SiO2: use of Optical Interference to Determine Electron and Hole Contribution, J. Appl. Phys., 1969, 40, 5093.
  • 9. R. J. POWELL, Interface Barrier Energy Determination from Voltage Dependence of Photoinjected Currents, J. Appl. Phys., 1970, 41, 2424.
  • 10. R. J. Powell, C. N. Berglund, Photoinjection Studies of Charge Distributions in Oxides of MOS Structures, J. Appl. Phys., 1971, 42, 4390-4397.
  • 11. R. H. Fowler, The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures, Phys. Rev., 1931,38,45.
  • 12. V. V. Afanas’ev, V. K. Adamchuk, Internal Photoemission Spectroscopy of Semiconductor-Insulator Interfaces, Progress in Surface Sci., 1992, 41, 111-211.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0014-0023
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