The influence of MBE growth conditions on optical properties of InGlGaAs/AlGaAs structures

• Autorzy: Kosiel K. , Regiński K. , Szerling A. , Piwoński T. , Bugajski M.
• Języki publikacji: EN

Abstrakty

EN

Optical properties of compressively strained In₀.₂₄Al₀.₁₉Ga₀.₅₇As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (T_s) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate T_s for InAlGaAs were experimentally found.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2004
• Tom: Vol. 36, nr 4
• Strony: 1--3
• Opis fizyczny: Bibliogr. 5 poz., tab., wykr.

Twórcy

autor

Kosiel K.

• lnstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Regiński K.

• lnstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Szerling A.

• lnstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Piwoński T.

• lnstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Bugajski M.

• lnstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• 1. J. M. Moison, C. Guille, F. Houzay, F. Barthe, M. V. Rompay, Phys. Rev. B, 1989, 40, 6149.
• 2. J. M. Gerard, Appl. Phys. Lett., 1992, 61, 2096.
• 3. J. M. Gerard, J. Y. Marzin, Phys. Rev. B, 1992, 45, 6313.
• 4. Y. Qu, S. Yuan, C. Y. Liu, B. Bo, G. Liu, H. Jiang, IEEE Photon. Technol. Lett., 2004,16, 389.
• 5. J. R. Jensen, J. M. Hvam, W. Langbein, J. Appl. Phys., 1999, 86, 2584.