Transmission electron microscopy of In(Ga)As quantum dot structure

• Autorzy: Kątcki J. , Ratajczak J. , Łaszcz A. , Phillipp F. , Paranthoen C. , Cheng X. L. , Fiore A. , Passaseo A. , Cingolani R.
• Języki publikacji: EN

Abstrakty

EN

The application of transmission electron microscopy (TEM) to the investigation of In(Ga)As quantum dot (QD) structures grown on GaAs substrates is reviewed. Using various examples of the QD structures the advantages of using TEM for the analysis of QDs are presented. From plan-view TEM images the areal density of dots can be determined in real structures where QDs are embedded in the structure. Cross-sectional TEM images inform us about the real geometry of the structure, the shape, width and height as well as the distribution of QDs. It is especially useful for the investigations of multilayer QD structures.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2003
• Tom: Vol. 35, nr 4
• Strony: 1--6
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Kątcki J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Ratajczak J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Łaszcz A.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Phillipp F.

• Max-Planck-Institut für Metallforschunf, Heisenbergstr. 3, D-70569 Stuttgart, Germany

autor

Paranthoen C.

• Institut de Photonique et d'Electronique Quantique Ecole Polytechnique Fédérale de Lausanne, CH 1015 Lausanne, Switzerland

autor

Cheng X. L.

• Institut de Photonique et d'Electronique Quantique Ecole Polytechnique Fédérale de Lausanne, CH 1015 Lausanne, Switzerland

autor

Fiore A.

• Institut de Photonique et d'Electronique Quantique Ecole Polytechnique Fédérale de Lausanne, CH 1015 Lausanne, Switzerland

autor

Passaseo A.

• National Nanotechnology Laboratory - INFM, c/o Dipartimento di Ingegneria dell'Innovazione, Universita di Lecce, Via Arnesano, 73100, Lecce, Italy

autor

Cingolani R.

• National Nanotechnology Laboratory - INFM, c/o Dipartimento di Ingegneria dell'Innovazione, Universita di Lecce, Via Arnesano, 73100, Lecce, Italy

Bibliografia

• 1. E D. L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, D. G. Deppe, 1.3 pm Room-Temperature GaAs-Based Quantum-Dot Laser, Appl. Phys. Lett., 1998, 73, 2564.
• 2. D. Bimberg, M. Grundmann, N. N. Ledentsow, S. S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, Self-Organization Processes in MBE-Grown Quantum Dot Structures, Thin Solid Films, 1995, 267, 32-36.
• 3. D. Leonard, S. Fafard, K. Pond, Y.H. Zhang, J.L. Merz, P.M. Petroff, Structural and Optical Properties of Self- Assembled InGaAs Quantum Dots, J. Vac. Sci & Technol. 1994, 12, 2516-2520.
• 4. H. Ishikawa, H. Shoji, Y. Nakata, K. Mukai, M. Sugawara, M. Egawa, N. Otsuka, Y. Sugijama, M. Futatsugi, N. Yokoyama, Self-Organized Quantum Dots and Quantum Dot LASERs (invited), J. Vacuum Sci. Technol. A, 1998, 16, 794.
• 5. V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M.V. Maximov, A. F. Tsatsul’nikov, N. Yu. Gordeev, S.V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledetsov, J. Bohrer, D. Bimberg, A. O. Kosogov, P. Werner, U. Gosele, Low-Threshold Injection Lasers Based on Vertically Coupled Quantum Dots, J. Cryst. Growth, 1997, 175/176, 689-695.
• 6. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, H. Ishikawa, High Characteristic Temperature of Near 1.3-mm InGaAs/GaAs Quantum-Dot Lasers at Room Temperature, Appl. Phys. Lett., 2000, 76, 3349.
• 7. J. X. Chen, A. Marcus, A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R. Houdre, L. Lazzarini, L. Nasi, M. T. Todaro, E. Piscopiello, R. Cingolani, M. Catalano, J. Kątcki, J. Ratajczak, Tuning InAs/GaAs Quantum Dot Properties under Stranski-Krastanov Growth Mode for 1.3 Micrometers Applications, J. Appl. Phys., 2002, 91, 6710-6716.
• 8. J. Oshinowo, M. Nishioka, S. Ishida, Y. Arakawa, Highly Uniform InGaAs/GaAs Quantum Dots (-15 nm) by Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett. 1994, 65, 1421-1423.
• 9. J. Bloch, J. Shah, W. S. Hobson, J. Lopata, S. N. G. Chu, Room-Temperature 1.3 pm Emission from InAs Quantum Dots Grown by Metal Organic Chemical Vapor Deposition, Appl. Phys. Lett, 1999, 75, 2199-2201.
• 10. A. Passaseo, G. Maruccio, M. De Vittorio, R. Rinaldi, R. Cingolani, M. Lomascolo, Wavelength Control from 1.25 to 1.4 pm in InxGa1-xAs Quantum Dot Structures Grown by Metal Organic Chemical Vapor Deposition, Appl. Phys. Lett. 2001, 78, 1382-1384.
• 11. A. Passaseo, R. Rinaldi, M. Longo, S. Antonaci, A. L. Converting, R. Cingolani, A. Taurino, M. Catalano, Structural Study of InGaAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications at 1.3 Micrometers, J. Appl. Phys., 2001, 89, 4341-4348.
• 12. M. De Giorgi, A. Passaseo, R. Rinaldi, T. Johal, R. Cingolani, A. Taurino, M. Catalano, P. Crozier, Nanoscale Compositional Fluctuations in Single InGaAs/GaAs Quantum Dots, phys. stat. sol. (b) , 2001, 224, 17-20.
• 13. A. Passaseo, G. Maruccio, M. De Vittorio, S. De Rinaldis, T. Todaro, R. Rinaldi, R. Cingolani, Dependence of the Emission Wavelength on the Internal Electronic Field in Quantum-Dot Laser Structures Grown by Metal-Organic Chemical-Vapor Deposition, Appl. Phys. Lett, 2002, 79, 1435-1437.
• 14. J. Kątcki, J. Ratajczak, M. Malag, M. Piskorski, [in]: Microscopy of Semiconducting Materials 1995 (A.G. Cullis, A. Staton-Bevan, Eds.), Inst. Phys. Ser. 146, Inst. Phys., Bristol, 1995, 273-276.