Compact device modeling using Verilog-AMS and ADMS

• Autorzy: Lemaitre L. , Grabiński W. , McAndrew C.
• Języki publikacji: EN

Abstrakty

EN

This paper shows how high level language such as Verilog-AMS can serve as support for compact modeling development of new devices. First section gives a fulI Verilog-AMS code of a simplified bipolar transistor. Each part of the code is carefulIy examined and explained. Second section compares different implementations of the simplified bipolar transistor in different spice simulators. ADMS, an open-source tool developed at Motorola, performs the implementation from Verilog-AMS to simulators. Third section concludes the paper by describing the implementation of the EKV model into ADS using the compact model interface provided by Agilent.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2003
• Tom: Vol. 35, nr 3
• Strony: 1--5
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Lemaitre L.

• Motorola, Geneva Modeling Center, 207 route de Ferney, CH-1218 Le Grand Saconnex, Switzerland

autor

Grabiński W.

• Motorola, Geneva Modeling Center, 207 route de Ferney, CH-1218 Le Grand Saconnex, Switzerland

autor

McAndrew C.

• Motorola, Phoenix, USA

Bibliografia

• 1. L. Lemaitre, C. McAndrew, S. Hamm, ADMS - Automatic Device Model Synthesize, CICC 2002, Florida, USA.
• 2. Verilog-AMS Language Reference Manual, Open Verilog Int., 1999.
• 3. MICA Device Programming Interface, Documentation and Programmer's Guide, Motorola Internal Document, 1998.
• 4. SPECTRE CMI Reference Manual, Cadence Design System, 1995.
• 5. Analog/RF User-Defined Models, Agilent Technologies, April 2001
• 6. C. Enz, F. Krummenacher, E. Vittoz, An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Application, J. Analog Integrat. Circ. a. Signal Process., 1995, 8, 83-114, Kluwer Acad. Pub.,
• 7. M. Bucher, C. Lallement, C. Enz, F. Théodoloz, F. Krummenacher, The EPFL-EKV MOSFET Model Equations for Simulation, Version 2.6, Technical Report, Electronics Laboratory, Swiss Federal Institute of Technology Lausanne, (EPFL), June 1997. Web Resources: http://legwww.epfl.ch/ekv.
• 8. M. Bucher, Analytical MOS Transistor Modeling for Analog Circuit Simulation, Ph.D. Thesis No. 2114, 1999, EPFL, Lausanne.
• 9. C. Lallement et al., High Level Description of Thermodynamical Effects in the EKV 2.6 Most Model, Proc. 9th Int. Conf, on Mixed-Signal Design (MIXDES), Wrocław, Poland, June 2002.
• 10. T. L. Chen, G. Gildenblat, Analytical Approximation for the MOSFET Surface Potential, Solid-St. Electron., 2001, 45, 3335.
• 11. M. Bucher et al., EKV 3.0: An Analog Design-Oriented MOS Transistor Model, Proc. 9th Int. Conf, on Mixed-Signal Design (MIXDES), Wroclaw, Poland, June 2002.