Transport and generation of the excess carriers in semiconductors in the presence of a temperature gradient and a magnetic field

• Autorzy: Sikorski S. , Piotrowski J.
• Języki publikacji: EN

Abstrakty

EN

In the Sections 1 and 2 of the paper the theory and a quantitative analysis of ambipolar thermodiffusion are presented. Formulas are derived describing the internal and total current densities and the excess carrier density distribution in a semiconductor in the presence of a temperature gradient perpendicular to the surface of the semiconductor plate. The Sections 3 and 4 describe the interaction of thermodiffusion current and perpendicular magnetic field resulting with emf and voltage between sample electrodes. We have called this phenomenon as thermomagnetoelectric effect (TME). The theory gives the formula that defines the TME voltage, which depends on the carrier lifetime and the surface recombination velocity of the semiconductor sample.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2003
• Tom: Vol. 35, nr 1
• Strony: 1--13
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Sikorski S.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Piotrowski J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• 1. P. J. Price, Ambipolar Thermodiffusion of Electrons and Holes in Semiconductors, Philosoph. Mag. 1955, 46, 7, 1252-1260.
• 2. S. Sikorski, T. Piotrowski, The Soret Thermodiffusion Currents and the Excess Carrier Thermoinjection Effect in Semiconductors, Electron Technol., 2000, 33, 4, 506-517.
• 3. Yu. G. Gurevich, O. Yu. Titov, G. N. Logvinov, O. I. Lyubimov, Nature of the Thermopower in Bipolar Semiconductors, Phys. Rev. B, 1995, 51, 11, 6999-7004.
• 4. Yu. G. Gurevich, G. N. Logvinov, I. N. Volovichev, G. Espejo, O.Yu. Titov, A. Meriuts, The Role Of Non Equilibrium Carriers in the Formation of Thermo-E.M.F. in Bipolar Semiconductors, phys. stat. sol. (b), 2002, 231, 1, 278-293.
• 5. S. Sikorski, T. Piotrowski, Transport of Excess Charge Carriers in an Inhomogeneous Semiconductor in the Presence of Temperature Gradient, Electron Technol., 2000, 33, 4, 494-505.
• 6. T. Piotrowski, S. Sikorski, Photovoltaic Effect in an Inhomogeneous Semiconductor with Position Dependent Temperature, Semicond. Sci. a. Technol., 2001, 16, 750-758.
• 7. S. Sikorski, T. Piotrowski, Photovoltaic Phenomena in Inhomogeneous Semiconductor. To be published in "Progress in Quantum Electronics".