MOCVD growth of Hg₁₋xCdxTe heterostructures for uncooled infrared photodetectors

• Autorzy: Piotrowski A. , Madejczyk P. , Gawron W. , Kłos K. , Romanis M. , Grudzień M. , Piotrowski J. , Rogalski A.
• Konferencja: International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

We report here recent progress at VIGO/WAT MOCVD Laboratory in the growth of Hg₁₋xCdxTe (HgCdTe) multilayer heterostructures on GaAs/CdTe and other composite substrates for uncooled infrared photodetectors. The optimum conditions for the growth of single layers and complex multilayer heterostructures have been established. One of the crucial stages of the technology was CdTe nucleation on GaAs substrate. Successful composite substrates were obtained with suitable substrate preparation, liner and susceptor treatment, proper control of background fluxes and appropriate nucleation conditions. The other critical stage is the interdiffused multilayer process (IMP). The growth of device-quality HgCdTe heterostructures requires complete homogenization of CdTe-HgTe pairs preserving at the same time suitable sharpness of composition and doping profiles. This requires for IMP pairs to be very thin and grown in a short time. The practical implications for the IMP process are the CdTe/HgTe growth times that become comparable with transition times between the phases, characteristic for the MOCVD machine. The growth during transition stages is characterized by the non-optimum flow velocities and partial pressures that may induce poor morphology, reduce growth rate and cause other problems. This became especially acute for doped layers when large Cd/Te ratio is required for efficient incorporation and full activation of dopants. This has been solved by careful selection of hydrogen carrier gas and metaloorganics fluxes with suitable switching on and off times. Arsenic and iodine has been used for acceptor and donor doping. Suitable growth conditions and post growth anneal is essential for stable and reproducible doping. In-situ anneal seems to be sufficient for iodine doping at any required level. In contrast, efficient As doping with near 100% activation requires ex situ anneal at near saturated mercury vapors. As the result, we are able to grow multilayer fully doped (100) and (111) heterostructures for various infrared devices including photoconductors, photoelectromagnetic and photovoltaic detectors.

Słowa kluczowe

EN

MOCVD growth; infrared photodetectors

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 4
• Strony: 453--458
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Piotrowski A.

• VIGO System S.A., 3 Świetlików Str., 01-389 Warsaw, Poland

autor

Madejczyk P.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Gawron W.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Kłos K.

• VIGO System S.A., 3 Świetlików Str., 01-389 Warsaw, Poland

autor

Romanis M.

• VIGO System S.A., 3 Świetlików Str., 01-389 Warsaw, Poland

autor

Grudzień M.

• VIGO System S.A., 3 Świetlików Str., 01-389 Warsaw, Poland

autor

Piotrowski J.

• VIGO System S.A., 3 Świetlików Str., 01-389 Warsaw, Poland

autor

Rogalski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

Bibliografia

• 1. P. Norton, “HgCdTe infrared detectors”, Opto-Electron. Rev. 10, 159-174 (2002).
• 2. J. Piotrowski, “Uncooled operation of IR photodetectors”, Opto-Electron. Rev. 12, 111-122 (2004).
• 3. J. Piotrowski, W. Galus and M. Grudzień, “Near room-temperature IR photodetectors”, Infrared Phys. 31, 1-48 (1990).
• 4. K. Adamiec, M. Grudzień, Z. Nowak, J. Pawluczyk, J. Piotrowski, J. Antoszewski, J. Dell, C. Musca, and L. Faraone, “Isothermal vapour phase epitaxy as a versatile technology for infrared photodetectors”, Proc. SPIE 2999, 34-43 (1997).
• 5. Epichem data sheets.
• 6. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M. B. Reine, and R.P. Ruth, “Key issues in HgCdTe-based focal plane arrays: An industry perspective”, J. Vac. Sci. Technol. 10, 1359-1369(1992).
• 7. S.J.C. Irvine, “Metal-organic vapour phase epitaxy”, in Narrow- gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, pp. 71-96, edited by P. Capper, Chapman @ Hall, London, 1997.
• 8. L.M. Smith and J. Thompson, “Metal organic chemical vapour deposition (MOCVD) of cadmium telluride, mercury telluride and cadmium mercury telluride”, Chemtronics 4, 60 (1989).
• 9. H.R. Vydyanath, “Donor and acceptor dopants in Hg1-xCdxTe alloys’, J. Vac. Sci. Technol. B9, 1716-1723 (1991).