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Photoluminescence characterization of vacuum deposited PTCDA thin films

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Konferencja
International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
Języki publikacji
EN
Abstrakty
EN
We investigated photoluminescence (PL) under steady state excitation and photoluminescence excitation (PLE) spectra of thin 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) films deposited on (001)Si substrate with various layer thicknesses grown at different substrate temperatures. The PL and PLE spectra have been measured at various temperatures, ranging from 10 K to 325 K. The PTCDA films exhibit strong luminescence at all mentioned ranges of temperature and for different values of excitation energy. The vibronic structure of PL spectra is clearly resolved at different temperatures. The position of peaks on energy scale depends on the temperature. We have observed a blue-shift of peaks with the decrease in the temperature. In all the investigated samples, the thermal quenching of PL has been observed. Analysis of the temperature dependence of the intensity bands, their position and full width half maximum (FWHM) allowed to find the energy barriers between the excited state and defect state. We propose a schematic potential energy diagram which explains mechanism of PL recombination
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autor
  • Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland
autor
  • Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland
autor
  • Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland
  • Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland
  • Institute of Physics, N. Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland
autor
  • Faculty of Technical Physics, Poznań University of Technology, 13A Nieszawska Str., 60-965 Poznań, Poland
  • Faculty of Technical Physics, Poznań University of Technology, 13A Nieszawska Str., 60-965 Poznań, Poland
Bibliografia
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  • 3. H.E. Katz, “Organic molecular solids as thin film transistor semiconductors”, J. Mater. Chem. 7, 369 (1997).
  • 4. J. Simon and J.J. Andre, Molecular Semiconductors, Springer, Berlin, 1985.
  • 5. A.Yu. Kobitski, R. Scholz, G. Salvan, T.U. Kampen, H.P. Wagner, and D.R.T. Zahn, “Time-resolved photoluminescence study of excitons in thin PTCDA films at various temperatures”, Appl. Surface Science 212/213, 428 (2003).
  • 6. L. Torsi, A. Dodabalapur, L. Rothberg, A. Fung, and H.E. Katz, “Intrinsic transport properties and performance limits of organic field effect transistors”, Science 272, 1462 (1996).
  • 7. F. Gamier, R. Hajlaoui, A. Yassar, and P. Srivastava, “All polymer field effect transistor realized by printing techniques”, Science 265, 1684 (1994).
  • 8. R. Loudon, The Quantum Theory of Light, Clarendon Press, Oxford, 1983.
  • 9. M. Liu, L. Bursil, S. Prawer, K. Nugent, Y. Tong, and G. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films”, Appl. Phys. Lett. 74. 3125-3127 (1999).
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0010-0032
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