Exciton energies and probability of their radiative decay in GaN/AIN quantum structures

• Autorzy: Tchelidze T. , Kereselidze T.
• Konferencja: International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

Exciton energies and probabilities of radiative transition from exciton state are calculated in GaN/AlN quantum dots. Electric field conditioned by strain induced and spontaneous polarization is considered by means of tight bind approximation, electron-hole Coulomb interaction is calculated by means of perturbation theory. Despite the presence of an electrical field, the calculated Coulomb energy is significantly increased with respect to bulk material. In large dots, the Coulomb term as well as probability of radiation transition for higher energetic excitons was strongly increased.

Słowa kluczowe

EN

GaN; quantum dots; excitons

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 4
• Strony: 441--443
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Tchelidze T.

• Faculty of Physics, Tbilisi State University, 3 Chavchavadze Ave., 0128 Tbilisi, Georgia

autor

Kereselidze T.

• Faculty of Physics, Tbilisi State University, 3 Chavchavadze Ave., 0128 Tbilisi, Georgia

Bibliografia

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