Photoreflectance and photoluminescence of thick GaN layers grown by HVPE

• Autorzy: Kudrawiec R. , Korbutowicz R. , Paszkiewicz R. , Syperek M. , Misiewicz J.
• Konferencja: International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

Very thick (up to 100 µm) GaN layers grown by HVPE are investigated by photoreflectance (PR) and photoluminescence (PL) spectroscopies. The layers were deposited on a GaN buffer layer which was grown on a c-plane sapphire substrate by MOVPE. Both, N- and Ga-polar layers were selected to these investigations. We have observed a strong dependence of the optical properties on the polarity of GaN surface. We have obtained that the bandgap-related emission for Ga-polar layers is stronger and narrower than the emission for N-polar layers. Also, significant differences have been found in PR spectra of the two type layers. In the case of Ga-polar layer a broad PR resonance with Franz-Keldysh oscillation (FKO) related to the surface electric field (215 kV/cm) has been observed, while in the case of N-polar layer narrow resonances have been found as being predominant. No-FKO for N-polar layer indicates that the surface electric field for this layer is weak. It means that the surface barrier for N-polar GaN is much smaller than for Ga-polar GaN layer.

Słowa kluczowe

EN

GaN; HVPE; photoreflectance; N-face; Ga-face

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 4
• Strony: 435--439
• Opis fizyczny: Bibliogr. 23 poz.

Twórcy

autor

Kudrawiec R.

• Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370 Wrocław, Poland

autor

Korbutowicz R.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland

autor

Paszkiewicz R.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland

autor

Syperek M.

• Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370 Wrocław, Poland

autor

Misiewicz J.

• Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370 Wrocław, Poland

Bibliografia

• 1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers, Springer-Verlag, Berlin Heidelberg, 1997.
• 2. S.J. Pearton, F. Ren, A.P. Zhang, and K.P. Lee, “Fabrication and performance of GaN electronic devices”, Material Science and Engineering R30, 55-212 (2000).
• 3. M. Leszczynski, I. Grzegory, H. Teisseyer, T. Suski, M. Bockowski, J. Jun, J.M. Baranowski, S. Porowski, and J. Domagała, “The microstructure of gallium nitride monocrystals grown at high pressure”, J. Crystal Growth 169, 235-242 (1996).
• 4. S. Porowski, “Growth and properties of single crystalline GaN substrates and homoepitaxial layers”, Mater. Sci. Eng. B44, 407-413 (1997).
• 5. J. Molnar, W. Goetz, L.T. Romano, and N.M. Johnson, “Growth of gallium nitride by hydride vapour-phase epitaxy”, J. Cryst. Growth 178, 147-156 (1997).
• 6. M.K. Kelly, R.P. Vaudo, V.M. Phanse, L. Gorgens, O. Ambacher, and M. Stultzmann, “Large free-standing GaN substrates by hydride vapour phase epitaxy and laser-induced liftoff”, Jpn. J. Appl. Phys. 38, L217-L219 (1999).
• 7. W.S. Wong, T. Sands, and N.W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates”, Appl. Phys. Lett. 72, 599 (1998).
• 8. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J.R. Shealy, L.F. Eastman, O. Ambacher, and M. Stutzmann, “Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire”, J. Appl. Phys. 87, 3375 (2000).
• 9. D. Huang, M.A. Reshchikov, P. Visconti, F. Yun, A.A. Baski, T. King, H. Morkoc, J. Jasinski, Z. Liliental-Weber, and C.W. Litton, “Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy”, J. Vac. Sci. Technol. B20, 2256 (2002).
• 10. X.Q. Shen, T. Ide, S.H. Cho, M. Shimizu, S. Hara, and H. Okomura, “Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction”, Appl. Phys. Lett. 77, 4013 (2000).
• 11. M. Sumiya, K. Yoshimura, K. Ohtsuka, and S. Fuke, “Dependence of impurity incorporation on the polar direction of GaN film growth”, Appl. Phys. Lett. 76, 2098 (2000).
• 12. Z.Q. Fang, D.C. Look, P. Visconti, D.F. Wang, C.Z. Lu, F. Yun, H. Morkoc, S.S. Park, and K.Y. Lee, “Deep centres in a free-standing GaN layer”, Appl. Phys. Lett. 78, 2178 (2001).
• 13. S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, and M. Eickhoff, “Exciton quenching in Pt/GaN Schottky diodes with Gaand N-face polarity”, App. Phys. Lett. 82, 1712 (2003).
• 14. U. Karrer, O. Ambacher, and M. Stutzmann, “Influence of crystal polarity on the properties of Pt/GaN Schottky diodes”, Appl. Phys. Lett. 77, 2012 (2000).
• 15. H.W. Jang, J.H. Lee, and J.L. Lee, “Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapour deposition”, App. Phys. Lett. 80, 3955 (2002).
• 16. F. Chichibu, A. Setoguchi, A. Udeno, K. Yoshimura, and M. Sumiya, “Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapour phase epitaxy”, Appl. Phys. Lett. 78, 28 (2001).
• 17. V. Kirilyuk, A.R.A. Zauner, P.C.M. Christianen, J.L. Weyher, P.R. Hageman, and P.K. Larsen, “Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities”, App. Phys. Lett. 76, 2355 (2000).
• 18. D.E. Aspnes, “Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillations”, Phys. Rev. B10, 4228-38 (1974).
• 19. F.H. Pollak, Handbook on Semiconductor, Elsevier, Amsterdam, 1994.
• 20. J. Misiewicz, P. Sitarek, G. Sek, and R. Kudrawiec, “Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy”, Materials Science 21, 263-318 (2003).
• 21. R. Paszkiewicz, R. Korbutowicz, D. Radziewicz, M. Panek, B. Ściana, B. Paszkiewicz, J. Kozłowski, B. Boratyński, and M. Tłaczała, „GaN epitaxy by MOCVD . HVPE methods”, 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Berlin, June 8-11 (1997).
• 22. R. Paszkiewicz, R. Korbutowicz, D. Radziewicz, M. Panek, B. Paszkiewicz, J. Kozłowski, B. Boratyński, and M. Tłaczała, “Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique”, Proc. SPIE 3725, 21 (1999).
• 23. A.T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, U.K. Mishra, and J.S. Speck, “Photoreflectance studies of N- and Ga-face AlGaN/GaN heterostructures confining a polarisation induced 2DEG”, Phys. Stat. Sol. (b) 240, 380-383 (2003).