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An attempt to design room-temperature-operated nitride diode VCSELs

Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Konferencja
International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
Języki publikacji
EN
Abstrakty
EN
The new modified structure of nitride diode vertical-cavity surface-emitting lasers (VCSELs) of anticipated high-performance low-threshold room-temperature operation is presented. Two essential structure modifications are proposed in this new design. First, tunnel junctions and a semi-transparent contact are used to enhance uniformity of the current injection into a VCSEL active region. Second, a new built-in radial waveguiding mechanism is introduced within the output distributed Bragg reflector. According to simulation results, the radius of the active region may be dramatically reduced in this new VCSEL design, even to just 1 žm, without a significant increase in the cavity optical losses. Hence, using this new proposed design, manufacturing low-threshold, electrically-driven, room-temperature-operated nitride VCSELs may become possible even at the current, still immature, development stage of nitride technology.
Twórcy
  • Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź 219 Wólczańska Str., 93-005 Łódź, Poland
autor
  • Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź 219 Wólczańska Str., 93-005 Łódź, Poland
autor
  • Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź 219 Wólczańska Str., 93-005 Łódź, Poland
autor
  • Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź 219 Wólczańska Str., 93-005 Łódź, Poland
  • Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA
Bibliografia
  • 1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, ”Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime”, Appl. Phys. Lett. 70, 868 (1997).
  • 2. M. Osiński, T. Svimonishvili, G.A. Smolyakov, V.A. Smagley, P. Maćkowiak, and W. Nakwaski, “Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures”, IEEE Photon. Techn. Lett. 13, 687 (2001).
  • 3. W. Nakwaski, M. Wasiak, P. Mackowiak, W. Bedyk, M. Osiński, A. Passaseo, V. Tasco, M.T. Todaro, M. De Vittorio, R. Joray, J.X. Chen, R.P. Stanley, and A. Fiore, “Oxidation kinetics of AlAs and (AlGa)As layers in arsenide- based diode lasers: Comparative analysis of available experimental data”, Semicond. Sci. Technol. 19, 333 (2004).
  • 4. M. Osiński and W. Nakwaski, “Three-dimensional simulation of vertical-cavity surface-emitting semiconductor lasers”, Chapter 5 in Vertical-Cavity Surface-Emitting Laser Devices, edited by H. Li and K. Iga, Chapter 5, Berlin, Springer, 2003.
  • 5. S.R. Jeon, Y.-H. Song, H.J. Jang, G.M. Yang, S.W. Hwang, and S.J. Son, “Lateral spreading in GaN-based light-emitting diodes utilizing tunnel contact junction”, Appl. Phys. Lett. 78, 3265 (2001).
  • 6. R.-H. Horng, D.-S. Wuu, Y.-C. Lien, and W.-H. Lan, “Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN”, Appl. Phys. Lett. 79, 2925 (2001).
  • 7. H. Wenzel and H.-J. Wünsche, “The effective frequency method in the analysis of vertical-cavity surface-emitting lasers”, IEEE J. Quantum Electron. 33, 1156 (1997).
  • 8. G.Y. Zhao, H. Ishikawa, G. Yu, T. Egawa, J. Watanabe, T. Soga, T. Jimbo, and M. Umeno, “Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapour deposition”, Appl. Phys. Lett. 73, 22 (1998).
  • 9. B. Mroziewicz, M. Bugajski, and W. Nakwaski, Physics of Semiconductor Lasers, Amsterdam, North-Holland 1991, Chapter 4.1.8.
  • 10. P. Maćkowiak and W. Nakwaski, .Designing guidelines for nitride VCSELs., J. Phys. D: Appl. Phys. 33, 642 (2000).
  • 11. P. Maćkowiak and W. Nakwaski, “Some aspects of designing an efficient nitride VCSEL resonator”, J. Phys. D: Appl. Phys. 34, 954 (2001).
  • 12. E.D. Palik, Handbook of Optical Constants of Solids, 1 and 2, Orlando, Academic 1985.
  • 13. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hoepler, R. Dimitrov, O. Ambacher, and M. Stutzmann, “Optical constants of epitaxial AlGaN films and their temperature dependence”, J. Appl. Phys. 82, 5090-5096 (1997).
  • 14. M. Mandy. Y. Leung, A.B. Djurisic, and E.H. Li, “Refractive index of InGaN/GaN quantum well”, J. Appl. Phys. 84, 6312-6327 (1998).
  • 15. M.J. Bergmann and H.C. Casey Jr., “Optical-field calculations for lossy multiple-layer AlxGa1-xN/InxGa1-xN laser diodes”, J. Appl. Phys. 84, 1196-1203 (1998).
  • 16. F.A. Kish, S.J. Caracci, N. Holonyak, Jr., J.M. Dallesasse, K.C. Hsieh, and M. J. Flies, S.C. Smith, and F.D. Burnham, “Planar native-oxide index-guided AlxGa1.xA-GaAs quantum well heterostructure lasers”, Appl. Phys. Lett. 59, 1755-1757 (1991).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0010-0027
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