Linear and nonlinear optical properties of Zn _1-xMg_xSe layers grown by MBE and PLD methods

• Autorzy: Derkowska B. , Wojdyła M. , Płóciennik P. , Sahraoui B. , Bała W.
• Konferencja: International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

Ternary and quaternary A^II B^VI mixing semiconductors are very attractive materials for various optical devices. Their optical properties such as the energy gap, linear refractive index, absorption coefficient and lattice constant can be changed with increasing component. For the practical application linear and nonlinear optical characterizations such as the two-photon absorption (TPA), linear and nonlinear refractive indexes are an important aspect. A practical motivation to measure the magnitude of TPA coefficient is that the performance of a device based on nonlinear refraction is strongly affected by the eventual nonlinear absorption. The refractive index and TPA coefficient of Zn_1-xMg_xSe compounds grown on glass substrates by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) methods were systematically investigated as a function of Mg composition. The linear optical properties have been studied using transmission, reflection, and photoreflection spectroscopy. The nonlinear optical properties of these materials were investigated by the nonlinear transmission. The energy gap and linear refractive index of these materials change with Mg content, hence the nonlinear optical processes such as TPA and nonlinear refraction index can be modified.

Słowa kluczowe

EN

Zn1-xMgxSe layers; reflection; transmission; refractive index; two-photon absorption; photoreflection

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 4
• Strony: 405--409
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Derkowska B.

• Institute of Physics, Nicholas Copernicus University, 5/7 Grudziądzka, 87-100 Toruń, Poland

autor

Wojdyła M.

• Institute of Physics, Nicholas Copernicus University, 5/7 Grudziądzka, 87-100 Toruń, Poland

autor

Płóciennik P.

• Institute of Physics, Nicholas Copernicus University, 5/7 Grudziądzka, 87-100 Toruń, Poland

autor

Sahraoui B.

• Laboratoire des Propriétés Optiques des Matériaux et Applications (POMA), EP CNRS 130, Université d’Angers, 2 Boulevard Lavoisier, 49045, Angers Cedex 01, France

autor

Bała W.

• Institute of Physics, Nicholas Copernicus University, 5/7 Grudziądzka, 87-100 Toruń, Poland

Bibliografia

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• 9. M.E. Constantino, H. Navarro-Contreras, M.A. Vidal, B. Salazar-Hernandez, A. Lastras-Martinez, I. Hernandez-Calderon, and M. Lopez-Lopez, “Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs”, J. Phys. D: Appl. Phys. 32, 1293-1301 (1999).
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