Microstructure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature and pressure

• Autorzy: Misiuk A. , Barcz A. , Surma B. , Bąk-Misiuk J. , Wnuk A.
• Konferencja: International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

The effect of high temperature (HT) up to 1400 K and high pressure (HP) up to 1.1 GPa on Cz-Si co-implanted with He⁺ (energy, E = 50 KeV, dose, D_He = 5x10¹⁶ cm⁻²) and H₂⁺ (E = 135 KeV, D_H 5x10¹⁶ cm⁻²), with almost overlapping implantation- disturbed layers, has been investigated. Numerous extended defects are created at HT and HP near the He and H concentration peaks, the overall structural perfection of annealed Si:He,H improves with HP. Oxygen gettering in the implantation- disturbed areas is much less pronounced under HP. The observed effects are related, among others, to decreased hydrogen out-diffusion and lowered dimensions of gas filled defects in Si:He,H treated under HP. Qualitative explanation of HP-mediated gettering of oxygen has been proposed.

Słowa kluczowe

EN

silicon; implantation; hydrogen; helium; high pressure; microstructure

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 4
• Strony: 383--387
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Misiuk A.

• Institute of Electron Technology, 46 Lotników Ave., 02-668 Warsaw, Poland

autor

Barcz A.

• Institute of Electron Technology, 46 Lotników Ave., 02-668 Warsaw, Poland

autor

Surma B.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-119 Warsaw, Poland

autor

Bąk-Misiuk J.

• Institute of Physics, PAS, 32/46 Lotników Str., 02-668 Warsaw, Poland

autor

Wnuk A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-119 Warsaw, Poland

Bibliografia

• 1. X. Duo, W. Liu, S. Xing, M. Zhang, X. Fu, C. Lin, P. Hu, S.X. Wang, and L.M. Wang, J. Phys. D: Appl. Phys. 34, 5 (2001).
• 2. A. Misiuk, A. Barcz, J. Ratajczak, and J. Bąk-Misiuk, Solid State Phen. 95/96, 313 (2004).
• 3. A. Misiuk, J. Ratajczak, A. Barcz, J. Bąk-Misiuk, A. Shalimov, B. Surma, A. Wnuk, J. Jagielski, and I.V. Antonova, submitted to Int. J. Hydrogen Energy.
• 4. A. Misiuk, Mater. Phys. Mech. 1, 119 (2000).
• 5. S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, and A. Cavallini, Solid State Phen. 82-84, 75 (2002).
• 6. A. Misiuk, A. Barcz, V. Raineri, J. Ratajczak, J. Bąk-Misiuk, I.V. Antonova, W. Wierzchowski, and K. Wieteska, Physica B308-310, 317 (2001).
• 7. A. Misiuk, A. Barcz, J. Ratajczak, J. Bąk-Misiuk, I.V. Antonova, and V.P. Popov, Physica B340-342, 659 (2003).