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Tytuł artykułu

Dynamic characteristics of gain-coupled ingaasp laser diodes and their reliability

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
15 th International Conference on Microwaves, Radar and Wireless Communications MIKON'04. Warsaw, 17-19.05, 2004
Języki publikacji
EN
Abstrakty
EN
Dynamic characteristics of partly gain-coupled multiple-quantum-well InGaAsP distributed feedback laser diodes have been investigated. Basic dynamic parameters (differential gain, K-factor, differential carrier lifetime) were found out. It is shown that the increase of coupling coefficient results not only in both oscillation and damping frequency increasing, but also in time-resolved frequency chirp oscillation decreasing. Relation between K-factor and differential carrier lifetime and their correlation with differential gain indicates essential differential gain role in dynamic parameter variance. A possibility to simulate the modulation characteristics of partly gain-coupled distributed feedback laser diodes using simple rate equations for carrier and photon density has been shown. Chirp and optical power pulses obtained by time-resolved frequency chirp measurements were compared with modelled ones.
Słowa kluczowe
EN
Rocznik
Strony
591--603
Opis fizyczny
Bibliogr. 8 poz., wykr.
Twórcy
  • Department of Radiophysics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania
  • Department of Radiophysics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania
autor
  • Department of Radiophysics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania
autor
  • Department of Radiophysics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania
  • Department of Radiophysics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania
Bibliografia
  • 1. H. Lu, T . Makino, and G. P. Li, "Dynamic properties of partly gain-coupled 1.55-μm DFB lasers", IEEE J. Q. E. , vol. 31, (1995), pp. 1443-1450.
  • 2. R. A. Saunders, J. P. King, and I. Hardcastle, Wideband chirp measurement technique for high bit rate sources, Electron. Lett., vol. 30,(1994), pp. 1336-1338.
  • 3. M. C. Tatham, I. F. Lealman, C. P. Seltzel, L. D. Westbrook, and D. M. Cooper, "Resonance frequency, damping and differential gain in 1.55-μm multiple quantum-well lasers", IEEE J. Q. E. , vol. 28, (1992), pp. 408-414.
  • 4. G. P. Agrawal and N. K. Dutta "Long Wavelength Semiconductor Lasers" (van Nostrand Reinhold Co., N. Y., 1986).
  • 5. F. Koyama and K. Iga.·”Frequency chirping in external modulators”·J. Lighwave Technol., vol. 6. (1988), pp. 87-93.
  • 6. J. K. White, C. Blaauw, P. Firth. and P. Aukland, “85 C investigatinn of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers”, IEEE Photon. Technol Lett., vol. 13, (2001), pp. 773-775.
  • 7. M. Fukuda, Reliability and degradation of semiconductor lasers and LEDs (Artech House 1991, USA, 1996).
  • 8. C. H. Henry, “Theory or the linewidth of semiconductor lasers", IEEE J. Q. E., vol. QE-18, (1982), pp. 259-264.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0009-0014
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