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The control of the output signal of semiconductor synchronized microwave oscillators by the bias voltage

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
15th International Conference on Microwaves, Radar and Wireless Communications MIKON'04. Warsaw, 17-19.05, 2004
Języki publikacji
EN
Abstrakty
EN
The use of the scheme of coherent signals subtraction (the synchrosignal and the synchronized oscillator output signal) for realization of the simple method of control of the output power of semiconductor microwave oscillators on the example of Gunn oscillator by the changing the bias of an active element has been proved theoretically and experimentally. The change up to 40 dB of the oscillator output power at the constant output frequency, when bias changes on 2.7%, has been achieved.
Słowa kluczowe
Rocznik
Strony
579--589
Opis fizyczny
Bibliogr. 23 poz., wykr.
Twórcy
autor
  • Saratov State University, Physical Department, Moskovskaya str., 410012 Saratov, Russia
autor
  • Saratov State University, Physical Department, Moskovskaya str., 410012 Saratov, Russia
autor
  • Saratov State University, Physical Department, Moskovskaya str., 410012 Saratov, Russia
  • Saratov State University, Physical Department, Moskovskaya str., 410012 Saratov, Russia
Bibliografia
  • 1. M. Shur: GaA, Devices and Circuits. New York and London: Plenum Press, 1987 p. 632.
  • 2. D. P. Tsarapkin: Microwave oscillators on Gunn diodes. M.: Ravio i Svyas, 1982.
  • 3. D. A. Usanov, Al. V. Skripal, An. V. Skripal: Physics or semiconductor radio and laser autodynes. Saratov: Saratov Univ. Press., 2003.
  • 4. D. A. Usanov, Al. V. Skripal: Physics of semiconductor devices operation in microwave circuits. Saratov: Saratov Univ. Press., 1999.
  • 5. B. S. Perlman. C. L. Upadhyayula, W. W. Siekanowicz: Microwave Properties and Application, of Negative Conductance Transferred Electron Devices // Proc. IEEE. 1971, Vol. 59, No.8. pp. 1229-1237.
  • 6. T. Makinoć: Effects 0f·the operational modes on the temperature dependence or The Gunn diode admittance // Solid State Electron. 1979, Vol. 22, No. 9, pp. 761-769.
  • 7. Microwave Devices. Device Circuit Interactions/ Ed. by M. J. Howes, D. V. Morgan (John Wiley 57890 & Sons, London, New York, Sydney, Toronto, 1976).
  • 8. G. I. Haddad, R. J. Trew: Microwave Solid-State Active Devices // IEEE Trans. Microwave Theory Tech. 2002, Vol. MTT-50, N 3, pp. 760-779.
  • 9. O. Muller, W. G. Figel: Stability Problems in Transistor Power Amplifiers// Proc. IEEE. 1967, Vol. 55, N 8, pp. 1458-1466.
  • 10. W. C. Tsai, F. I. Rosenbaum: Bias circuit oscillations in Gunn devices// IEEE Trans. Electron Dev. 1969, Vol. ED-16, No. 2, pp. 196-202.
  • 11. D. A. Usanov, S. S. Gorbalov, A. V. Skripal: Features of the low-frequency microwave oscillations of Gunn diodes // Izv. VUZ. Radioelectronics. 1981, T. 24, N 10, pp. 67-69.
  • 12. A. Suárez, A. Mediavilla, J. F. Luy: Period doubling route to chaos in SiGe IMPATT diodes// IEEE Microwave Guided Wave Lett. 1998, Vol. 8, N 4, pp. 170-172.
  • 13. B. Ingruber, W. Pritzl, I. D. Smely, M. Wachutka, G. Magerl High-Efficiency Harmonic-Control Amplifier// IEEE Transactions on Microwave Theory and Techniques. 1998, Vol. 46, N 6, pp. 857-862.
  • 14. D. A. Usanov, A. V. Skripal: The physics of semiconductor devices operation in microwave circuits. Saratov: Publishing house of Saratov State University, 1999, pp. 376.
  • 15. D. A. Usanov, A. V. Skripal, A. V. Abramov, A. A. Kletzov: Nonlinearity of the frequency characteristics of the MESFET in the large signal mode// Izv. VUZ. Electronics. 2003, N 5, pp. 50-56.
  • 16. D. A. Usanov, S. S. Gorbatov, A. A. Semenov. V. D. Tupikin: Active microwave filters on the base of semiconductor microwave oscillators operated in synchronization mode // Devices and Technique of the Experiment. 1991, N 5, pp. 121-122.
  • 17. D. A. Usanov, A. V. Skripal, A. V. Abramov: Optical control of semiconductor synchronized microwave oscillators in the signals subtraction scheme // Izv. VUZ. Electronics. 2002, N 5 pp. 31-39.
  • 18. D. A. Usanov, A. V. Skripal, A. V. Abramov: Optical control of semiconductor synchronized microwav? oscillators in the power suppression model// Journal of Telecommunications and Information Technology// 2003, N 1 , pp. 30-35.
  • 19. D. A. Usanov, A. V. Skripal, A. V. Abramov: Optical control of semiconductor synchronized microwave oscillators in the power suppression mode // Proc. of 33rd European Microwave Conference. Munich, Germany. 7-9th October 2003, Vol. 3, pp. 1405-1408.
  • 20. A. V. Abramov, D. A. Usanov. A. V. Skripal, V. A. Pozdnyakov: A microwave method for measurement of free charge carriers mobility in semiconductor structures// Proc. of XV International Conference on Microwaves. Radar and Wireless Communications MIKON-2004, Poland, Warszawa, May 17-19, 2004, Vol. 2. pp. 667-770.
  • 21. A. V. Abramov, D. A. Usanov. A. V. Skripal, V. A. Pozdnyakov: Modulation of the output power of semiconductor microwave oscillators by changing the voltage in bias circuit// Proc. of XV International Conference on Microwaves, Radar and Wireless Communications MIKON-2004, Poland, Warszawa, May 17-19, 2004, Vol. 3, pp. 874-877.
  • 22. V. S. Andreev: To the theory of synchronization of self-oscillators on the base of devices with negative resistance // Radioengineering. 1975, N 2, pp. 43-53.
  • 23. H. W. Thim: Computer study of bulk GaAs devices with random one-dimensional doping fluctuations // J. Appl. Phys. 1968, Vol. 39, N 8, pp. 3897-3904.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0009-0006
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