A SiGe bipolar WCDMA power amplifier with 52% PAE at 3.3 V

• Autorzy: Kitlinski K. , Donig G. , Bakalski W. , Kapfelsperger B. , Weigel R.
• Konferencja: 15th International Conference on Microwaves, Radar and Wireless Communications MIKON'04. Warsaw, 17-19.05, 2004
• Języki publikacji: EN

Abstrakty

EN

A monolithic radio frequency power amplifier for WCDMA handheld applications has been fabricated in a 0.35 um, 40 GHz f_T - volume production SiGe bipolar technology. The process technology features a doped ground connection for on-chip devices to improve the overall performance. At 3.3 V supply voltage saturated output power of 29 dBm with a PAE of 52% has been achieved; simultaneously OP1 dB reaches 28 dBm and the small signal gains is 32 dB.

Słowa kluczowe

EN

microwave power bipolar transistor amplifiers; MMIC amplifiers; code division multi-acces; inductors

• Wydawca: Wydawnictwo Naukowe PWN SA
• Czasopismo: Kwartalnik Elektroniki i Telekomunikacji
• Rocznik: 2004
• Tom: Vol. 50, z. 4
• Strony: 539--551
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Kitlinski K.

autor

Donig G.

autor

Bakalski W.

autor

Kapfelsperger B.

autor

Weigel R.

Bibliografia

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