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CMOS MMICs for microwave and millimeter wave applications

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
15 th International Conference on Microwaves, Radar and Wireless Communications MIKON'04. Warsaw, 17-19.05, 2004
Języki publikacji
EN
Abstrakty
EN
Recent results on MMICs based on a 90-nm CMOS process are presented. Linear and nonlinear models were developed for the transistors based on S-parameters, noise parameters, and power spectrum measurements. Based on em-simulations, models for multilayer capacitances, MIM-capacitances, various transmission lines etc were also developed. Amplifiers, frequency mixes, and frequency multipliers were then designed, fabricated and characterized. Amplifiers with a gain of 6 and 3,5 dB per stage at 20 and 40 GHz respectively, were demonstrated as well as frequency multipliers from 20 to 40 GHz with 15.8 dB conversion loss, and 30 to 60 GHz multipliers with 15.3 dB conversion loss. Resistive mixers at 20, 40, and 60 GHz were also demonstrated with promissing results.
Słowa kluczowe
EN
Rocznik
Strony
515--538
Opis fizyczny
Bibliogr. 22 poz., rys., wykr.
Twórcy
autor
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
autor
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
  • Ericsson AB, Microwave and Speed Electronics Center, SE - 431 84 Mӧlndal, Sweden
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
autor
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
autor
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
autor
  • Ericsson Microwave System, SE - 431 84 Mӧlndal, Sweden
autor
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
  • Ericsson AB, Microwave and Speed Electronics Center, SE - 431 84 Mӧlndal, Sweden
  • Chalmers University of Technology, Department of Microtechnology and Nanoscience, Microwave Electronics LaboSE - 412 96 Göteborg, Sweden
Bibliografia
  • 1. H. Zirath, "Development of 60 GHz front end circuits for high data rate communication systems in Sweden and Europe", 2003 IEEE-GaAs IC, Gallium Arsenide Int. Circ. Symp., Dig., pp. 93-96, 2003.
  • 2. Y. Mimino, et al, "A 60 GHz millimeter-wave MMIC chipset for broad band wireless access system font-end", IEEE MTT-S International Microwave Symposium Digest, vol. 3, pp. 1721-1724, 2002.
  • 3. I. Angelov, L. Bengtsson, M. Garcia,"Extensions of the Chalmers nonlinear HEMT and MESFET mode", IEEE·- MTT, Trans. on Microwave Theory and Tech. Vol. 44, pp. 1664-7, Oct. 1996.
  • 4. G. Bartolucci, F. Giannini, E. Limiti, and S. P. Marsh, "MIM Capacitor Modeling: A Planar Approach", IEEE Trans. Microwave Theory and Tech., vol. 43, no. 4, pp.901-903, April 1995.
  • 5. M. Armacost, A. Augustin. P. Felsner, et al, "A High Reliability Metal Insulator Metal Capacitor for 0.18 μm Copper Technology" Proc. IEEE: Int Interconnect Technol. Conf. 2001 pp. 113-115, 2001.
  • 6. C. C. Lin, H. M. Hsu, Y. H. Chen, et al, "A Full Cu Damascene Metallization Process for Sub - 0,18 μm RF CMOS SoC High Q Inductor and MIM Capacitor Application at 2.4 GHz and 5.3 GHz" Proc. IEEE Int Interconnect Technol. Conf. 2001, pp. 113-115, 2001.
  • 7. Chen Zhen, Guo Lihui, Yu Mingbian and Zhang Yi, "A Study of MIMIM On-Chip Capacitors Using Cu/SiO2 Interconnect Technology" IEEE Microwave and Wireless Components Letters, vol. 12, no. 7, pp. 246-248, July 2002.
  • 8. Kai Shao, Sanford Chu, Kok-Wai Chew, et al, "A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 μm analog and RFCMOS" Proc. IEEE 6th International Conf. Solid-State and Integrated-Circuit Technology. 2001, vol. 1, pp. 243-246, 200l.
  • 9. C. H. Ng, K. W. Chew, J. X. Li, et al, "Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors", IEEE Electron Device Lett., vol. 3, no. 9 pp. 529-531, September 2002.
  • 10. X. Guan, A. Hajimiri, "A 24-GHz CMOS Front-End", IEEE-Journal of solid-state circ. Vol. 39, no. 2, pp. 368-373, Feb. 2003.
  • 11. S. Hackl, J. Back, G. Ritzberger, M. Wurzer, H. Knapp, L. Treitinger, A. L. Scholtz, “A 45 GHz SiGe active frequency multiplier", 2002 IEEE-ISSSC Int. Solid State Circuits Conf, vol. 1, pp. 82-447, Feb. 2002.
  • 12. M. Tiebout, H.-D. Wohlmuth, W. Simburger, "A l V 51 GHz fully -integrated VCO in 0.12 μm CMOS", 2002 IEEE-ISSCC Int. Solid State Circuits Conf., vol. 1, pp. 300-468, Feb. 2002.
  • 13. H. Wang, "A 50 GHz VCO in 0.25 μm CMOS", 2002 IEEE-ISSCC Int. Solid State Circuits Conf., pp. 372-3, Feb. 2001.
  • 14. C. Fager, L. Landen, H. Zirath."High output power, broadband 28-56 GHz MMIC frequency doubler”, 2000 IEEE-MTT-S Int. Microwave Symp. Dig, vol. 3, pp. 1589-1591, June 2000.
  • 15. V. Gefrroy, et al, "RF mixers using standard digital CMOS 0.35 μm process”, IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 83-86, 2001.
  • 16. P. Gould, et al, “A CMOS resistive ring mixer MMIC, for GSM 900 and DCS 1800 base station applications". IEEE MTT-S International Microwave Symposium Digest. vol. 1, pp. 521-524, 2000.
  • 17. J. .I. Kucera, et al. "A zero DC-power low distortion mixer for wireless applications", IEEE Microwave Guided Wave Lett., vol. 9, pp. 157-159, Apr. 1999.
  • 18. L. Verweyen, et al. ''LMDS up- and down-converter MMIC2", IEEE MTT-S International Microwave Symposium Digest, pp. 1685-1688, Boston, MA. June 2000.
  • 19. B. M. Frank, et al. "A novel common gate mixer for wireless applications", IEEE transactions on Microwave Theory and Techniques, vol. 50, pp. 1433-1435, May 2002.
  • 20. F. Ellinger, et al. “Compact monolithic integrated resistive mixers with low distortion for HIPERLAN", IEEE transactions on Microwave Theory and Techniques, vol. 50, pp. 178-180, Jan. 2002.
  • 21. L. M. Devlin, et al. "A monolithic 2 to 18 GHz Upconverter", IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 257-261, 2002.
  • 22. K. Andersson, et al. "Resistive SiC-MESFET mixer", IEEE Microwave and Wireless Camponents Lett., vol. 12, pp. 119-121, Apr. 2002.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0009-0002
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