Tranzystory mocy typu MOS z węglika krzemu

• Autorzy: Zarębski J.

Warianty tytułu

EN

SiC Power MOSFETs

• Języki publikacji: PL

Abstrakty

PL

W pracy dokonano przeglądu literatury dotyczącej opracowanych laboratoryjnych struktur tranzystarów MOS mocy z węglika krzemu. Przedstawiono charakterystyki i podstawowe parametry tych elementów. Omawiane tranzystory, ze względu na rodzaj kanału, podzielono na dwie zasadnicze grupy - tranzystory z kanałem inwersyjnym (indukowanym) oraz z kanałem akumulacyjnym (wbudowanym).

EN

This paper deals with the literature review of the SiC power MOS transistors elaborated, fabricated and investigated in the laboratories of the known electronic concerns and some universities. The parameter values and characteristics are also presented. Depending on the kind of the channel, the SIC MOSFETs with the inversion and accummulation channel respectively, have been distinguished and discussed.

Słowa kluczowe

PL

SiC; tranzystory mocy; SiC MOSFET

EN

SiC; power transistors; SiC MOSFET

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2004
• Tom: Vol. 45, nr 7
• Strony: 11--17
• Opis fizyczny: Bibliogr. 29 poz., rys., wykr.

Twórcy

autor

Zarębski J.

• Akademia Morska w Gdyni, Katedra Radioelektroniki Morskiej

Bibliografia

• 1. Powel A.R.. Rowland L.B.: SiC Materials - Progress. Status and PotentialRoadblocks. Proc, of the IEEE, vol. 90, No. 6, June 2002, pp. 942-955.
• 2. Bakowski M., Harris Ch.: Silicon Carbide-New High-Temperature Material for Microelectronics. MICROTHERM’98, pp. 103-117.
• 3. Neudeck P.G.: Progress Towards High Temperature, High Power SiC Devices. Compound Semiconductors 1994, pp. 1-6.
• 4. Yoder M.N.: Wide Bandgap Semiconductor Materials and Devices. IEEE Trans, on Electron Devices, vol. 43, no. 10, October 1996, pp. 1633-1936.
• 5. Benda V., Gowar J., Grant D.A.: Power Semiconductor Devices - Theory and Applications. Willey and Sons, 1999.
• 6. http://www.eetimes.com/semi/news/showArticle.jhtml?articlelD = 12805277
• 7. Palmour J.W.: 6H-SiC Power Devices. Proc, of the IECEC, p. 1249, 1993.
• 8. Palmour J.W., Edmonds J.A., Kong H.S., Carter C.H.: Silicon Carbide Power Devices. Inst. of Phys. Conf. Series, no. 137: Ch. 7, pp. 499, 1994.
• 9. Palmour J.W.: 4H-SiC High Temperature Devices. Proc, of the High Temp. Elect. Conf., vol. 2, p. XVI9, 1996.
• 10. Agarwal A.K., Casady J.B., Rowland L.B., Valek W.F., White M.H., Brandt C.D.: 1.1 kV 4H-SiC Power UMOSFET’s. IEEE Electr. Dev. Lett., vol. 18, pp. 5. 586, 1997.
• 11. Baliga B.J.: Critical Nature of Oxide/Interface Quality for SiC Power Devices. Microelectronics Eng., vol. 28, pp. 177, 1995.
• 12. Tan J., CooperJ.A., Melloch M.R.: High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC. IEEE Trans, on Electron Devices, Vol. 19, No. 12, December 1998, pp.487-489.
• 13. Li Y., Cooper J.A., Capano M.A.: High-Voltage (3 kV) UMOSFETs in 4H-SiC. IEEE Trans, on Electron Devices, vol. 49, no. 6, pp. 972-975, June 2002.
• 14. Khan I.A., Cooper J.A., Capano M.A., Smith T.I., Williams J.R.: High-Voltage UMOSFETs in 4H-SiC. School of ECE, Purdue University, West Lafayette IN47907, IEEE 2002, pp. 157-160.
• 15. Shenoy J.N., Cooper J.A., Melloch M.R.: High-voltage Double-lmplanted Power MOSFETs in 6H-SiC. IEEE Elect. Dev. Lett., Vol. 18, p. 93, 1997.
• 16. Cooper A.J., Agarwal A.: SiC Power-Switching Devices - The Second Electronics Revolution? Proc, of the IEEE, vol. 90, no. 6, pp. 956-968, June 2002.
• 17. Agarwal A., Ryu S.H., Das M., Lipkin L., Palamour J., Saks N.: Large Area 4H-SiC Power MOSFETs. Proc, of the International Symposium on Power Semiconductor Devices & ICs, Osaka 2001, pp. 183-186.
• 18. Peters D., MitlehnerH., Elpelt R., Schorner R., Stephani D.: State of the Art and Technological Challenges of SiC Power MOSFETs Designed for High Blocking Voltages. Proc, of the EPE2003-Toulouse, pp. 1-7.
• 19. Spitz J., Melloch M.R., Cooper J.A., Capano M.A.: 2,6 kV 4H-SiC Lateral DMOSFETs. IEEE Electron Device Letters, vol. 19, no. 4, pp. 100-102, April 1998.
• 20. Saks N.S., Mani S.S., Agarwal A.K., Ancona M.G.: A 485-V High-Voltage 6H-SiC Lateral MOSFET. IEEE Elect. Dev. Lett., vol. 20, p. 431,1999.
• 21. Agarwal A.K., Saks N.S., Mani S.S., Hedge V.S., Sanger P.A.: lnvestigation of Lateral RESURF, 6H-SiC MOSFETs. Mat. Sci. Forum. vol. 338-342, p. 1307, 2000.
• 22. Chatty K., Banerjee S., Chow T.P., Gutmann R.J.: High-Voltage Lateral RESURF MOSFETs on 4H-SiC. Trans, on Electron Devices, vol. 21, no. 7, pp. 356-358, July 2000.
• 23. Chow T.P.: High-Voltage SiC Devices for Power Electronics Applications -Future Prospects. Proc, of the EPE 2003 -Toulouse, pp. 1-13.
• 24. Shenoy P.M., Baliga B.J.: The Planar 6H-SiC ACCUFET: „A New High-Voltage Power MOSFET Structure”. IEEE Elect. Dev. Lett., vol. 18, pp. 598, 1997.
• 25. Singh R., Capell D.C., Richmond J. T., Palamour J.W.: High Channel Density, 20 A 4H-SiC ACCUFET with Ronsp = 15 mΩcm2. Trans, on Electron Devices, vol. 39, no. 19th, pp. 152-154, January 2003.
• 26. Onda S., Kumar R., Hara K.: SiC Integrated MOSFETs. Phys. Stat. Sol. (a), vol. 162, p. 369, 1997.
• 27. Tan J., Cooper J.A., Melloch M.R.: High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC. IEEE Electron Device Letters, vol. 19, no. 12, pp. 487-489, December 1998.
• 28. Linewih H., Dimitrijev S., Weitzel Ch.E.. Harrison H.B.: Novel SiC Accumulation-Mode Power MOSFET. IEEE Trans, on Electron Devices, vol. 48, no. 8, pp. 1711-1717, August 2001.
• 29. Cooper J.A., Melloch M.R., Singh R., Palmour J.W.: Status and Prospects for SiC Power MOSFET. IEEE Trans. Electron Dev., vol. 49, no. 4, pp. 658-663, 2002.