Design of a GaN UV integrated photoreceiver

• Autorzy: Wiatrowski A. , Boratyński B.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

A design of the structure of an integrated GaN photoreceiver for the UV range is presented. The circuit includes an MSM photodetector and an HFET based amplifier. Preliminary data for the design were obtained from the measurements performed on the test structures - CTLM, van der Pauw, Schottky contacts and also performed on discrete devices - MSM detectors, HFET transistors - all fabricated on AlGaN/GaN/sapphire substrates. Frequency response characteristics of the HFET based amplifier and also of the complete MSM-HFET photoreceiverwere computer-simulated. One of the most important steps in device monolithic integration is isolation of the elements. In this project were considered two types of possible elements isolation: plasma etch (mesa) and implant isolation. A set of photolithography masks for chip fabrication on AlGaN/GaN layers was created. Anticipated fabrication of the designed MSM-HFET integrated photoreceiver in 1-um geometry should allow its RF operation.

Słowa kluczowe

EN

integrated photoreceiver; MSM; HFET; GaN

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 165--168
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Wiatrowski A.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland

autor

Boratyński B.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, 11/17 Janiszewskiego Str., 50-372 Wrocław, Poland

Bibliografia

• 1. B. Boratynski and W. Strupinski, “High temperature electronics”, Proc. Nat. Electronic Conf. 12, KKE Kołobrzeg, 691–696 (2003).
• 2. G.K. Reeves, ”Specific contact resistance using a circular transmission line model”, Solid State Electronics 23, 487–490 (1980).
• 3. K. Honkanen, “Fabrication and modelling of SOI and GaAs MSM photodetectors and a GaAs-based integrated photoreceiver”, Ph.D. Thesis, Helsinki University of Technology, Helsinki 2001.
• 4. P.H. Ladbroke, MMIC Design GaAs FET’s and HEMT’s, Artech House Inc., New York, 1989.