Photodiode with resonant cavity based on InGaAs/InP for 1.9 µm band

• Autorzy: Zynek J. , Jasik A. , Strupiński W. , Rutkowski J. , Jagoda A. , Przyborowska K. , Jakieła R. , Piersa M. , Wnuk A.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

The results of the work aiming at development of a RCE photodiode operating at 1.9 µm are described. Detection is based on interband absorption in a thin pseudomorphic InGaAs layer placed inside a resonant cavity which enhances an optical field. The technology of heterostructures grown by MOCVD has been developed. The photodiode structure comprises, between two parallel Bragg mirrors, an InP p-i-n junction with a thin strained InxGa₁₋xAs (0.65≤x≤0.8) layer placed inside an undoped region. The bottom Bragg mirror is composed of an In₀.₅₃Ga₀.₄₇As/InP quarter-wave layer stack, the top mirror is made of Si/SiO₂ layers deposited on epitaxial layers by a sputtering method. Good properties of InxGa₁₋xAs strained layers and good reflectivity spectra of the Bragg mirrors enable us to obtain RCE photodetectors with photoresponse characteristics at wavelengths near 1.9 um. Photodetectors exhibit very low dark current densities (of the order of 10⁻⁶ A/cm²).

Słowa kluczowe

EN

RCE photodetector; InGaAs photodiode

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 149--155
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Zynek J.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Jasik A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Strupiński W.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Rutkowski J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Jagoda A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Przyborowska K.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Jakieła R.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Piersa M.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Wnuk A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

Bibliografia

• 1. A.M. Joshi, G.H. Olsen, S. Mason, M.J. Lange, and V.S. Ban, “Near-infrared (1–3 µm) InGaAs detectors and arrays: crystal growth, leakage current and reliability”, Proc. SPIE 1715, 585–593 (1992).
• 2. Sensors Unlimited, Hamamatsu and XenICs product catalogues.
• 3. K. Kishino, M.S. Ünlü, J.I. Chyi, J. Reed, L. Arsenault, and H. Morkoç, “Resonant cavity-enhanced (RCE) photodetectors”, IEEE J. Quantum Electron. 27, 2025–2034 (1991).
• 4. M.S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices”, J. Appl. Phys. 78, 607–639 (1995).
• 5. B.N. Sverdlov, A.E. Botchkarev, N. Teraguchi, A.A. Salvador, and H. Morkoç, “Reduction of dark current in photodiodes by the use of a resonant cavity”, Electron. Lett. 29, 1019–1021 (1993).
• 6. S. Jourba, M.P. Besland, M. Gendry, M. Garrigues, J.L. Leclercq, P. Rojo-Romeo, P. Viktorovich, S. Cortial, X. Hugon, and C. Pautet, “2-µm resonant cavity enhanced InP/ InGaAs single quantum well photo-detector”, Electron. Lett. 35, 1272–1274 (1999).
• 7. J.A. Jervase and H. Bourdoucen, “Design of resonant-cavity-enhanced photodetectors using genetic algorithms”, IEEE J. Quantum Electron. 36, 325–332 (2000).