InGaAs for infrared photodetectors. Physics and technology

• Autorzy: Kaniewski J. , Piotrowski J.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

InGaAs is a variable band gap semiconductor with excellent transport and optical properties. This makes it attractive for electronic and optoelectronic devices. One of the most important applications is short wavelengh (1–3.6 µm) infrared photodetectors. Such devices are based on multilayer heterostructures with complex band gap and doping profiles. Significant progress in technology of the InGaAs heterostructures has been achieved with MBE and MOCVD growth. We discuss here the status and perspectives of infrared photodetectors based on advanced InGaAs heterostructures.

Słowa kluczowe

EN

InGaAs photodiodes; optical immersion; resonant cavity; Schottky photodiodes; avalanche photodiodes

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 139--148
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Kaniewski J.

• Institute of Electron Technology, 32/46 Al. Lotników, 02-668 Warsaw, Poland

autor

Piotrowski J.

• Military Institute of Armament Technology, 7 Prymasa Wyszynskiego Str., 05-220 Zielonka, Poland

Bibliografia

• 1. J. Piotrowski and J. Kaniewski, “Optimisation of InGaAs infrared photovoltaic detectors”, IEE Proc. Optolectron. 146, 173–176 (1999).
• 2. J. Piotrowski, J. Kaniewski, and K. Reginski, “Modelling and optimisation of InGaAs infrared photovoltaic detectors”, Nucl. Instr. Methods in Phys. Res. A439, 647–650 (2000).
• 3. A. Rogalski, “Performance limitations of InGaAs photodiodes”, Proc. SPIE 3725, 260–269 (1999).
• 4. E.L. Dereniak and G.D. Boreman, Infrared Detectors and Systems, J. Wiley and Sons, N.Y., 1996.
• 5. R.C. Jones, “Immersed radiation detectors”, Appl. Optics 5, 607–613 (1962).
• 6. J. Kaniewski, Z. Orman, J. Piotrowski, K. Reginski, and M. Romanis, “Advanced InGaAs detectors on GaAs substrates”, Proc. SPIE 4130, 749–759 (2000).
• 7. K. Kishino, M.S. Unlu, J. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors”, IEEE J. Quantum Electron. 27, 2025–2034 (1991).
• 8. M.S. Unlu and S. Strite, “Resonant cavity enhanced photonic devices”, J. Appl. Phys. 78, 607–639 (1995).
• 9. M.S. Unlu, K. Kishino, H.J. Liaw, and H. Morkoc, “A theoretical study of resonant cavity-enhanced photodetectors with Ge and Si active regions”, J. Appl. Phys. 71, 4049–4058 (1992).
• 10. Y.M. El-Batawy and M.J. Deen, “Resonant cavity enhanced photodetectors (RCE-PDs): structure, material, analysis and optimisation”, Proc. SPIE 4999, 363–378 (2003).
• 11. B.M. Onat, M. Gokkavas, E. Ozbay, E.P. Ata, E. Towe and M.S. Unlu, “100-GHz resonant cavity enhanced Schottky photodiodes”, IEEE Photon. Technol. Lett. 10, 707–709 (1998).
• 12. N. Biyikli, I. Kimukin, O. Aytur, M. Gokkavas, M.S. Unlu, and E. Ozbay, “45 GHz bandwith-efficiency resonant-cavity enhanced ITO-Schottky photodiodes”, IEEE Photon. Technol Lett 13, 705–707 (2001).
• 13. S.S. Martuza, K.A. Anselm, C. Hu, H. Nie, B.G. Streetman, and J.C. Campbell, “Resonant cavity enhanced (RCE) separate absorption and multiplication (SAM) avalanche photodetector (APD)”, IEEE Photon. Technol. Lett. 7, 1486–1488 (1995).
• 14. C. Lenox, H. Nie, P. Yuan, G. Kinsey, A.L. Holmes, G.B. Streetman, and J.C. Campbell, “Resonant cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz”, IEEE Photon. Technol. Lett. 11, 1162–1164 (1999).
• 15. A.G. Dentai, R. Kuchibhotla, J.C. Campbell, C. Tsai, and C. Lei, “High quantum efficiency long-wavelength InP/InGaAs microcavity photodiode”, Electron. Lett 27, 2125–2127 (1991).
• 16. F.Y. Huang, A. Salvador, X. Gui, N. Teraguchi, and H. Morkoc, “Resonant-cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure”, Appl. Phys. Lett. 63, 141–143 (1993).