Planar junction formation in HgCdTe infrared detectors

• Autorzy: Rutkowski J.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

This paper presents an overview of fundamental techniques for planar junction formation in HgCdTe infrared detectors. At the beginning, the evolution of HgCdTe photodiode performance is presented. Further considerations are restricted to modern methods of p-n junction formation, so the current state of the art of different types of HgCdTe photodiodes is presented. The comparison of theoretical and experimental results for planar HgCdTe photodiodes is finally described.

Słowa kluczowe

EN

planar photodiodes; heterojunction; HgCdTe

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 123--128
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Rutkowski J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,

Bibliografia

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