Photoluminescence study of ZnO/CdS/Cu(In,Ga)Se2 solar cells

• Autorzy: Bacewicz R. , Żuk P. , Trykozko R.
• Języki publikacji: EN

Abstrakty

EN

Photoluminescence (PL) of the absorber layer of ZnO/CdS/Cu(In,Ga)Se2 solar cells has been studied. Baseline process solar cells as well as structures subject to a damp heat treatment and sodium - free structures have been investigated. The excitation intensity and temperature dependence of the photoluminescence spectra have been measured. A large blue shift of the photoluminescence bands for increasing excitation intensity has been observed with a per decade shift value ranging from 10 meV for baseline cells to 35 meV for Na free cells. This is characteristic behaviour for spectral bands due to transitions involving random potential fluctuations in highly compensated In-rich near-interface layer of the Cu(In,Ga)Se2 film. The temperature evolution of the spectra indicates two types of PL transitions: the tail-impurity and band-impurity transitions. The change of the PL spectra upon the damp heat treatment is discussed.

Słowa kluczowe

EN

thin film solar cells; photoluminescence; defect states

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 4
• Strony: 277--280
• Opis fizyczny: Bibliogr. 14 poz., rys.

Twórcy

autor

Bacewicz R.

• Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland

autor

Żuk P.

• Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, PolandFaculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland

autor

Trykozko R.

• Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland

Bibliografia

• 1. H.W. Schock and U. Rau, Physica B308-310, 1081 (2001).
• 2. I. Dirnstorfer, W. Burkhardt, W. Kriegseis, I. Osterreicher, H. Alves, D.M. Hoffman, O. Ka, A. Polity, B.K. Meyer, and D. Braunger, "Annealing studies on Culn (Ga)Se2: the influence of gallium", Thin Solid Films 361/362, 400-4005 (2000).
• 3. I. Dirnstorfer, M.T. Wagner, D.M. Hoffman, M.D .Lampert, F. Karg, and B.K. Meyer, "Characterization of Culn(Ga)Se2 thin films III. In-rich layers", Phys. Status Solidi A168 163-175 (1998).
• 4. M.T. Wagner, D.M. Hoffman, I. Dirnstorfer, M.D. Lampert, F. Karg, and B.K. Meyer, "Characterization of Culn(Ga)Se2 thin films I. Cu- rich Layers", Ph y s. Status Solidi A167, 131 (1998).
• 5. M.T. Wagner, D.M. Hoffman, I. Dirnstorfer, M.D. Lampert, F. Karg, and B.K. Meyer, "Characterization of Culn(Ga)Se2 thin films II. Magneto-optical properties of Cu- and In-rich layers", Phys. Status Solidi A168, 153 (1998).
• 6. I. Dirnstorfer, D.M. Hoffman, D. Meister, B.K. Meyer, W. Riedl, and F. Karg, "Postgrowth thermal treatment of Culn(Ga)Se2: Characterization of doping levels in In-rich thin films", J. Appl. Phys. 85, 1423-1428 (1999).
• 7. J. Kessler, M. Bodegard, J. Hedstroem, and L. Stolt, "Baseline Cu(In,Ga)Se2 device production: control and statistical significance", Solar Energy Materials & Solar Cells 67, 67-76 (2001).
• 8. J. Wennerberg, J. Kessler, M. Bodegard, and L. Stolt, Proc. Second World Conf. on PV Solar Energy Conversion, 1161 (1998).
• 9. P.W. Yu, "Excitation-dependent emission in Mg-, Be-, Cd-, and Zn -implanted GaAs", J. Appl. Phys. 48, 5043-5051 1977).
• 10. S.B. Zhang, Su-Huai Wei, and A. Zunger, "Defect physics of the CuinSe2 chalcopyrite semiconductor", Phys. Rev. B57, 9642-9656 (1998).
• 11. Su-Huai Wei, S.B. Zhang, and A. Zunger, "Effects of Na on the electrical and structural properties of CuinSe2", J. Appl. Phys. 85, 7214-7218 (1999).
• 12. G .A. Medvedkin, E.I. Terukov, Y. Hasegawa, K. Hirose, and K. Sato, "Microdefects and point defects optically detected in Cu(In.Ga)Se2 thin film solar cells expo ed to the damp and heating", Solar Energy Materials and Solar Cells 75, 127 (2003).
• 13. C. Deibel, V. Dyakonov, J. Parisi, J. Palm, S. Zweigait, and F. Karg, "Influence of damp heat testing on the electrical characteristics of Cu (In,Ga) (S,Se)2 solar cells", Thin Solid Films 403/404, 325-330 (2002).
• 14. M. Igalson, M. Wimbor, and J. Wenneberg, "The change of the electronic properties of CIGS devices induced by the damp heat treatment", Thin Solid Films 403/404, 320-324 (2002).